Zobrazeno 1 - 10
of 19
pro vyhledávání: '"A. K. Omaev"'
Publikováno v:
Optics and Spectroscopy. 130:203-206
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::628b7c6fbeb1d07d81c2dd9646eb4d6d
https://doi.org/10.1134/s0030400x22030109
https://doi.org/10.1134/s0030400x22030109
Publikováno v:
Technical Physics Letters. 44:1142-1144
High-quality heteroepitaxial (0001)ZnO:Te/(0001)GaN/(0001)Al2O3 structures have been grown by hydrogen vapor-phase epitaxy in a low-pressure continuous flow reactor. X-ray diffraction analysis of these heterostructures has been carried out, which rev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::755eebf175d43781287a987d63a418c8
https://doi.org/10.1134/s1063785018120398
https://doi.org/10.1134/s1063785018120398
Publikováno v:
Technical Physics. 59:708-710
The electrical and luminescent properties of zinc oxide films grown by CVD on sapphire substrates with different carrier gases are investigated. It is found that hydrogen, oxygen, and ammonia used as a carrier gas in the growth process insignificantl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c106cf14787b3f839b741a0c4bb0b146
https://doi.org/10.1134/s1063784214050041
https://doi.org/10.1134/s1063784214050041
Autor:
B. M. Ataev, G. A. Onushkin, S. Sh. Makhmudov, Ya. I. Alivov, V. V. Mamedov, E.V. Kalinina, A. K. Omaev
Publikováno v:
Journal of Crystal Growth. 275:e2471-e2474
We report on the first results of n-ZnO/p-SiC heterostructures fabrication by chemical vapor deposition in the low-pressure system. The structural and luminescence properties of these structures are studied.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e55cdd05adc1c08e166d40ec882805c
https://doi.org/10.1016/j.jcrysgro.2004.11.379
https://doi.org/10.1016/j.jcrysgro.2004.11.379
Publikováno v:
Technical Physics Letters. 36:34-36
Arrays of zinc oxide (ZnO) nanowhskers oriented perpendicularly to the surface of a substrate have been obtained by explosive laser evaporation of ZnO target on (0001)-oriented sapphire and unoriented silica, glass ceramic composite (Polycor), and gl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::981bce1869446eeaa3e8def1e2b68f50
https://doi.org/10.1134/s1063785010010116
https://doi.org/10.1134/s1063785010010116
Publikováno v:
Inorganic Materials. 36:219-222
High-conductivity, transparent zinc oxide epilayers doped with In and Ga (0.1–2 wt %) were grown by chemical vapor transport in a reduced-pressure flow reactor. Their electrical and optical properties were studied.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c8c99146bb134a3275a1412a4fdf99b
https://doi.org/10.1007/bf02757924
https://doi.org/10.1007/bf02757924
Publikováno v:
Materials Science and Engineering: B. 65:159-163
It is possible to fabricate thin epitaxial ZnO layers doped in situ with In and Ga impurities by chemical vapor deposition (CVD) in a low-pressure system. Highly conductive and transparent ZnO:Me (0.1–2 wt.%) films are deposited on (1012) sapphire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5089786f6d8b903c5d48db761dd4aae7
https://doi.org/10.1016/s0921-5107(99)00166-x
https://doi.org/10.1016/s0921-5107(99)00166-x
Publikováno v:
Journal of Crystal Growth. :1222-1225
Sucessful preparation of ZnO : M epitaxial thin films (ETF) in situ doped with donor impurity M=Ga, Sn by chemical vapor despsition in a low-pressure system is reported. Highly conductive (up to 10 −4 Ω cm) and transparent ( T >85%) ZnO : M ETF ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fc4a48204fce8c609ff4aa7dc10ecf4
https://doi.org/10.1016/s0022-0248(98)01217-2
https://doi.org/10.1016/s0022-0248(98)01217-2
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 71:657-659
n-ZnO/p-A IIIN (A III = Ga, Al) heterojunctions have been fabricated, which exhibit relatively strong electroluminescence in the blue-violet spectral range under forward bias. It is shown that ZnO layers grown with rf-discharge activation have a less
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc1f81e0197a5be196930b8fd98a774f
https://doi.org/10.3103/s1062873807050176
https://doi.org/10.3103/s1062873807050176
Autor:
Darren M. Bagnall, David C. Look, M. V. Chukichev, A. E. Cherenkov, E. V. Kalinina, B. M. Ataev, A. K. Omaev, Ya. I. Alivov
Publikováno v:
Applied Physics Letters. 83:4719-4721
We report on the fabrication of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates. Hydride vapor phase epitaxy was used to grow p-type AlGaN, while chemical vapor deposition was used to produce the n-type ZnO layers. Diode-like,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d757002e6e13658fc68b302e8a769d9f
https://doi.org/10.1063/1.1632537
https://doi.org/10.1063/1.1632537