Zobrazeno 1 - 6
of 6
pro vyhledávání: '"A. K. M. Ashiquzzaman Shawon"'
Publikováno v:
Applied Sciences, Vol 9, Iss 8, p 1609 (2019)
Aluminum antimonide is a semiconductor of the Group III-V order. With a wide indirect band gap, AlSb is one of the least discovered of this family of semiconductors. Bulk synthesis of AlSb has been reported on numerous occasions, but obtaining a sing
Externí odkaz:
https://doaj.org/article/4cbe7820428c43d3bc79e2400ffb75bb
Autor:
Sevan Chanakian, Wanyue Peng, Vanessa Meschke, A. K. M. Ashiquzzaman Shawon, Jesse Adamczyk, Valeri Petkov, Eric Toberer, Alexandra Zevalkink
Publikováno v:
Angewandte Chemie International Edition.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42574fe0828fdb29b9085099d3eade72
https://doi.org/10.1002/anie.202301176
https://doi.org/10.1002/anie.202301176
Publikováno v:
Electronic Materials Letters. 17:102-108
Zintl compounds were recognized as very good thermoelectric candidate due to their characteristics electron-crystal phonon- glass properties. Mg3Sb2 is a known Group II–V Zintl semiconductor. This compound is a well-established thermoelectric mater
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::002949375c74af6859b36d6af7c56d9b
https://doi.org/10.1007/s13391-020-00251-y
https://doi.org/10.1007/s13391-020-00251-y
Autor:
Robert Freer, Dursun Ekren, Tanmoy Ghosh, Kanishka Biswas, Pengfei Qiu, Shun Wan, Lidong Chen, Shen Han, Chenguang Fu, Tiejun Zhu, A K M Ashiquzzaman Shawon, Alexandra Zevalkink, Kazuki Imasato, G. Jeffrey Snyder, Melis Ozen, Kivanc Saglik, Umut Aydemir, Raúl Cardoso-Gil, E Svanidze, Ryoji Funahashi, Anthony V Powell, Shriparna Mukherjee, Sahil Tippireddy, Paz Vaqueiro, Franck Gascoin, Theodora Kyratsi, Philipp Sauerschnig, Takao Mori
Publikováno v:
Freer, R, Ekren, D, Ghosh, T, Biswas, K, Qiu, P, Wan, S, Chen, L, Han, S, Fu, C, Zhu, T, Ashiquzzaman Shawon, A K M, Zevalkink, A, Imasato, K, Snyder, G J, Ozen, M, Saglik, K, Aydemir, U, Cardoso-gil, R, Svanidze, E, Funahashi, R, Powell, A V, Mukherjee, S, Tippireddy, S, Vaqueiro, P, Gascoin, F, Kyratsi, T, Sauerschnig, P & Mori, T 2022, ' Key properties of inorganic thermoelectric materials—tables (version 1) ', Journal of Physics: Energy, vol. 4, no. 2, 022002 . https://doi.org/10.1088/2515-7655/ac49dc
Journal of Physics: Energy
Journal of Physics: Energy
This paper presents tables of key thermoelectric properties, which define thermoelectric conversion efficiency, for a wide range of inorganic materials. The twelve families of materials included in these tables are primarily selected on the basis of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e1296a3c0e680bca49b17d69fd5273a
https://hdl.handle.net/20.500.12508/2233
https://hdl.handle.net/20.500.12508/2233
Publikováno v:
Journal of Electronic Materials. 49:2762-2767
AlSb is a line compound and the synthesis of single phase bulk AlSb has always proven to be a significant challenge. Synthesis of bulk single phase AlSb by powder metallurgy has not yet been reported. This work shows a novel synthetic route for succe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c777e317cb40987d9d1d460eadffcdc
https://doi.org/10.1007/s11664-019-07726-1
https://doi.org/10.1007/s11664-019-07726-1
Publikováno v:
Materials Science in Semiconductor Processing. 110:104974
The III-V semiconductor AlSb has an indirect band gap and a relatively moderate thermal conductivity. Intrinsic AlSb has a promising thermopower, but a very high resistivity and the lattice thermal conductivity keeps the ZT value significantly low. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9072775cdfe74934a3d274901a079015
https://doi.org/10.1016/j.mssp.2020.104974
https://doi.org/10.1016/j.mssp.2020.104974