Zobrazeno 1 - 7
of 7
pro vyhledávání: '"A. K. Karakhodzhaev"'
Autor:
N. A. Tursunov, K. A. Begmatov, A. Kh. Sadikov, M. Karimov, A. K. Karakhodzhaev, Sh. A. Makhmudov, Sh. Makhkamov
Publikováno v:
Russian Physics Journal. 52:448-451
The relaxation kinetics of photoconductivity in neutron-doped silicon (NDS) of the p-type is discussed. It is found that the relaxation process in the compensated p-Si differs from that in the reference p-Si sample. The difference is explained on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaae77ede2ca1ded4dfad91cd6d5846e
https://doi.org/10.1007/s11182-009-9253-0
https://doi.org/10.1007/s11182-009-9253-0
Publikováno v:
Russian Physics Journal. 49:183-187
This work is aimed at studying the electrophysical and recombination properties of slowly and rapidly cooled n-and p-type silicon doped by nickel during thermal treatment. It is shown that the changes in the lifetime in slowly and rapidly cooled n-Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b32b67fd7fa010b038d246c1a03caaf0
https://doi.org/10.1007/s11182-006-0085-x
https://doi.org/10.1007/s11182-006-0085-x
Publikováno v:
Russian Physics Journal. 48:1298-1301
Silicon samples with various nickel and copper concentrations were studied by the method of isochronal annealing. In so doing, the temperature of total decomposition of Ni and Cu centers was found to depend on the concentration of nickel and copper a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77f0d4632ba2255295ee48c990f15e46
https://doi.org/10.1007/s11182-006-0061-5
https://doi.org/10.1007/s11182-006-0061-5
Autor:
A. K. Karakhodzhaev, M. Karimov
Publikováno v:
Russian Physics Journal. 44:734-737
The influence of the rate of hardening changing in the range 0.6–250 deg/min and of repeated thermal treatment at temperatures of up to 1020 K on the charge-carrier lifetime τ in overcompensated n-Si is investigated. It is demonstrated that the va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::194b6858115d811fbfb1862e661d7e87
https://doi.org/10.1023/a:1012911410229
https://doi.org/10.1023/a:1012911410229
Autor:
M. Karimov, A. K. Karakhodzhaev
Publikováno v:
Russian Physics Journal. 43:527-530
An increase and stabilization of the charge-carrier lifetime in compensated n-Si exposed to radiation is discussed. A mechanism is suggested which explains this effect based on concepts of the increase of potential fluctuation barriers upon exposure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::776c391967fdf493ed009da4c5748e8b
https://doi.org/10.1007/bf02508954
https://doi.org/10.1007/bf02508954
Autor:
A. K. Karakhodzhaev, M. Karimov
Publikováno v:
Russian Physics Journal. 43:509-511
The influence of the electric parameters of compensating sulfur and rhodium impurities on the photosensitivity of p-type silicon is discussed in the present paper. Conditions of the increased photosensitivity ofSi andSi in the near-IR region of the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e29869e8079b700d711c94a8e41f340
https://doi.org/10.1007/bf02508633
https://doi.org/10.1007/bf02508633
Publikováno v:
Russian Physics Journal. 47:790-791
The compensated silicon (Si ) containing carbon and germanium impurity atoms exhibits some special features (from the point of view of radiation physics) causing a modification of quasichemical impurity-defect processes in this material as compared t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67cd8f277964fec2068aec37ea49db8d
https://doi.org/10.1023/b:rupj.0000049756.21347.33
https://doi.org/10.1023/b:rupj.0000049756.21347.33