Zobrazeno 1 - 10
of 251
pro vyhledávání: '"A. K. Bakarov"'
Autor:
M. L. Savchenko, A. Shuvaev, I. A. Dmitriev, A. A. Bykov, A. K. Bakarov, Z. D. Kvon, A. Pimenov
Publikováno v:
Physical Review Research, Vol 3, Iss 1, p L012013 (2021)
We report an observation of magneto-oscillations in transmittance of the circularly polarized microwave radiation through the high-mobility two-dimensional electron system hosted by a GaAs quantum well. The oscillations reflect an enhanced absorption
Externí odkaz:
https://doaj.org/article/b873415061d741b7ad14a22ecebc4480
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065232-065232-5 (2020)
Spin transport was studied in a two-dimensional electron gas hosted in a wide GaAs quantum well occupying two subbands. Using space and time Kerr rotation microscopy to image drifting spin packets under an in-plane accelerating electric field, optica
Externí odkaz:
https://doaj.org/article/916e80e8e2004a98b98fb9d49a94289d
Publikováno v:
AIP Advances, Vol 8, Iss 2, Pp 025318-025318-6 (2018)
We report electrical and magneto transport measurements in mesoscopic size, two-dimensional (2D) electron gas in a GaAs quantum well. Remarkably, we find that the probe configuration and sample geometry strongly affects the temperature evolution of l
Externí odkaz:
https://doaj.org/article/28a564d2572f4f9f9aeadce982690eac
Autor:
Mikhail O. Petrushkov, Demid S. Abramkin, Eugeny A. Emelyanov, Mikhail A. Putyato, Oleg S. Komkov, Dmitrii D. Firsov, Andrey V. Vasev, Mikhail Yu. Yesin, Askhat K. Bakarov, Ivan D. Loshkarev, Anton K. Gutakovskii, Victor V. Atuchin, Valery V. Preobrazhenskii
Publikováno v:
Nanomaterials, Vol 12, Iss 24, p 4449 (2022)
The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural prop
Externí odkaz:
https://doaj.org/article/7dbc3147a1d048e38e57c7e12aed3698
Publikováno v:
JETP Letters. 116:643-648
Magneto-intersubband oscillations in a highly mobile two-subband electron system with one-dimensional periodic modulation of the potential under the conditions of overlapping Landau bands have been experimentally investigated. A significant modificat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a33bd80a41b7e75f94e2d0a50ee66b3
https://doi.org/10.1134/s0021364022602068
https://doi.org/10.1134/s0021364022602068
Publikováno v:
JETP Letters. 116:360-366
A physical mechanism has been proposed to explain the appearance of the multichannel electron transport regime in trench quantum point contacts. It has been shown that the redistribution of electrons in a two-dimensional electron gas, which is due to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::418ba30033d159f8ee99f460fb80d8f4
https://doi.org/10.1134/s0021364022601610
https://doi.org/10.1134/s0021364022601610
Autor:
A. A. Bykov, D. V. Nomokonov, A. V. Goran, I. S. Strygin, A. K. Bakarov, S. Abedi, S. A. Vitkalov
Publikováno v:
JETP Letters. 114:423-428
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43e277422be370d9b27a3ca804467266
https://doi.org/10.1134/s0021364021190048
https://doi.org/10.1134/s0021364021190048
Autor:
S. A. Bogdanov, A. K. Bakarov, K. S. Zhuravlev, V. G. Lapin, V. M. Lukashin, A. B. Pashkovskii, I. A. Rogachev, E. V. Tereshkin, S. V. Shcherbakov
Publikováno v:
Technical Physics Letters. 47:329-332
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eba0fbe5cb3118a12005ef0bcb3e53ae
https://doi.org/10.1134/s1063785021040052
https://doi.org/10.1134/s1063785021040052
Publikováno v:
Journal of Physics D: Applied Physics. 56:175301
The recombination dynamics are studied in viscous electron–hole plasma, consisting of electrons and photo-generated heavy and light holes, formed in the high-mobility mesoscopic GaAs channel. It is shown that an increase in the pump power reduces t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48892e022e68c6dc907c2b867698322e
https://doi.org/10.1088/1361-6463/acba2a
https://doi.org/10.1088/1361-6463/acba2a
Publikováno v:
Technical Physics Letters. 47:139-142
Features of the molecular beam epitaxy growth of the AlSb/InAs heterostructures with a high-mobility two-dimensional electron gas for microwave transistors with ultralow power consumption are described. The main stages of fabrication of the transisto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::807f342d2458ab27352d2f4642f2e40b
https://doi.org/10.1134/s1063785021020127
https://doi.org/10.1134/s1063785021020127