Zobrazeno 1 - 10
of 39
pro vyhledávání: '"A. John Kadaksham"'
Autor:
H. P. Amanapu, Ranganath Teki, Uma Rames Krishna Lagudu, Arun John-Kadaksham, Suryadevara V. Babu
Publikováno v:
ECS Transactions. 50:73-79
We describe the effectiveness of depositing an amorphous silicon thin film to cover the existing defects on the surface of extreme ultraviolet (EUV) lithography mask substrates and then polishing the film using abrasive-free liquids. Preliminary inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0050a26bc9da0dfba25b3eabf65586bb
https://doi.org/10.1149/05039.0073ecst
https://doi.org/10.1149/05039.0073ecst
Autor:
Suryadevara V. Babu, Ranganath Teki, Uma Rames Krishna Lagudu, A. John-Kadaksham, H. P. Amanapu
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:P362-P367
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27230396149a72810434391c2ec11f02
https://doi.org/10.1149/2.015309jss
https://doi.org/10.1149/2.015309jss
Autor:
Arun John Kadaksham, Steve Trigg, Long He, Frank Goodwin, Patrick A. Kearney, Alin Antohe, Milton Godwin, Alan V. Hayes, Al Weaver
Publikováno v:
SPIE Proceedings.
For full commercialization, extreme ultraviolet lithography (EUVL) technology requires the availability of EUV mask blanks that are free of defects. This remains one of the main impediments to the implementation of EUV at the 22 nm node and beyond. C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1c5917451596c5a5a96f5b48a328a3c
https://doi.org/10.1117/12.2048541
https://doi.org/10.1117/12.2048541
Publikováno v:
SPIE Proceedings.
In the absence of a pellicle, an EUVL reticle is expected to withstand up to 100 cleaning cycles. EUVL reticles constitute a complex multi-layer structure with extremely sensitive materials which are prone to damage during cleaning. The 2.5 nm thin R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d75ce54ed0dba8f0ec32318be933403
https://doi.org/10.1117/12.2031430
https://doi.org/10.1117/12.2031430
Publikováno v:
SPIE Proceedings.
The ability of optical lithography to steadily produce images at increasingly smaller dimension while maintaining pattern fidelity of devices with greater complexity has enabled the success of Moore’s Law. Although 193 nm immersion and double patte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5141cefbec5e48400dc950afd4e1b483
https://doi.org/10.1117/12.2039943
https://doi.org/10.1117/12.2039943
Autor:
Ranganath Teki, Richard Jenkins, Dave Balachandran, Paul Dumas, Arun John Kadaksham, Chuck McFee
Publikováno v:
SPIE Proceedings.
EUV mask substrates, made of titania-doped fused silica, ideally require sub-Angstrom surface roughness, sub-30 nm flatness, and no bumps/pits larger than 1 nm in height/depth. To achieve the above specifications, substrates must undergo iterative gl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fa23654f2094815368cf7459a54c10a
https://doi.org/10.1117/12.2026372
https://doi.org/10.1117/12.2026372
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
With the insertion of extreme ultraviolet lithography (EUVL) for high volume manufacturing (HVM) expected in the next few years, it is necessary to examine the performance of low thermal expansion materials (LTEMs) and assess industry readiness of EU
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4686e07b8c20e7d88290fdfaffc9fe3
https://doi.org/10.1117/12.2011718
https://doi.org/10.1117/12.2011718
Autor:
Sarah Mead, Zachary R. Robinson, Carl A. Ventrice, Arun John Kadaksham, Tyler R. Mowll, Frank Goodwin
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
EUV masks and mask blanks pose new challenges for storing and cleaning, as the masks are designed to be pellicle-less. A ruthenium capping material is often used as an etch stop for mask making; however, it is readily oxidized by exposure to air and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::728d6a145787b41cb7935a86d5a5cb82
https://doi.org/10.1117/12.2011721
https://doi.org/10.1117/12.2011721
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
Although the quality of extreme ultraviolet (EUV) mask substrates has improved by continuous refinement of the polishing processes, the yield of defect-free blanks is still very low. Dressed-photon nanopolishing (DPNP) is a novel vapor phase, photo-c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5245faf7c0c4205394c68506ea2e810a
https://doi.org/10.1117/12.2011260
https://doi.org/10.1117/12.2011260
Publikováno v:
SPIE Proceedings.
Achieving mask blanks with defectivity less than 0.03 defects/cm2 at 30 nm SiO2 equivalent and above is one of the key goals for accomplishing high volume manufacturing capability for EUV lithography. Defect free blanks for lithography start from def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40e1a8a6e097ab1b5a094c92146490b9
https://doi.org/10.1117/12.976980
https://doi.org/10.1117/12.976980