Zobrazeno 1 - 10
of 187
pro vyhledávání: '"A. J. Ptak"'
Autor:
Dennice M. Roberts, Hyunseok Kim, Elisabeth L. McClure, Kuangye Lu, John S. Mangum, Anna K. Braun, Aaron J. Ptak, Kevin L. Schulte, Jeehwan Kim, John Simon
Publikováno v:
ACS Omega, Vol 8, Iss 47, Pp 45088-45095 (2023)
Externí odkaz:
https://doaj.org/article/ebcd54a6dd544151960f215a41fe75ef
Autor:
Jacob T. Boyer, Anna K. Braun, Kevin L. Schulte, John Simon, Steven W. Johnston, Harvey L. Guthrey, Myles A. Steiner, Corinne E. Packard, Aaron J. Ptak
Publikováno v:
Crystals, Vol 13, Iss 4, p 681 (2023)
We analyze the effect of growth on non-(100) surfaces resulting from incomplete planarization of spalled GaAs wafers on the defect structure of GaAs solar cell layers grown by hydride vapor phase epitaxy (HVPE). Controlled spalling of (100)-oriented
Externí odkaz:
https://doaj.org/article/75ba7915ba274126b76fd19008e8da12
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
Gallium arsenide holds record efficiency for single junction solar cells, but high production costs limit applications. Here Metaferia et al. show high quality GaAs and GaInP at rates exceeding 300 and 200 micrometers per hour by dynamic hydride vapo
Externí odkaz:
https://doaj.org/article/76d3c17ba9bf4329a31118ee1649e1ba
Publikováno v:
Crystal Growth & Design. 23:1195-1204
Publikováno v:
Progress in Photovoltaics: Research and Applications. 31:230-236
Autor:
Brelon J. May, Jae Jin Kim, Patrick Walker, William E. McMahon, Helio R. Moutinho, Aaron J. Ptak, David L. Young
Publikováno v:
ACS Omega. 7:24353-24364
The high cost of substrates for III-V growth can be cost limiting for technologies that require large semiconductor areas. Thus, being able to separate device layers and reuse the original substrate is highly desirable, but existing techniques to lif
Autor:
Wondwosen Metaferia, Jason Chenenko, Corinne E. Packard, Evan W. K. Wong, Aaron J. Ptak, Kevin L. Schulte
Publikováno v:
IEEE Journal of Photovoltaics. 12:962-967
Autor:
Corinne E. Packard, Steve Johnston, Aaron J. Ptak, Noor Alkurd, David L. Young, Alessandro Cavalli, David R. Diercks, Dennice M. Roberts, John Simon, Brett E. Ley
Publikováno v:
IEEE Journal of Photovoltaics. 12:337-343
Publikováno v:
IEEE Journal of Photovoltaics. 11:1251-1255
GaInP top cell current-density presently limits the performance of HVPE-grown two-junction devices, in large part due to unwanted dopant diffusion. Here, we institute mitigation strategies to lower the diffusion of dopants from both the front contact
Autor:
Kevin L. Schulte, Wondwosen Metaferia, John Simon, Anna K. Braun, Corinne E. Packard, Aaron J. Ptak
Publikováno v:
Crystal Growth & Design. 21:3916-3921