Zobrazeno 1 - 10
of 21
pro vyhledávání: '"A. J. M. Berntsen"'
Autor:
Arjan J. M. Berntsen, Coen T. H. F. Liedenbaum, H.F.M. Schoo, P. van de Weijer, Paul W. M. Blom, Y. Croonen
Publikováno v:
Journal of Materials Science: Materials in Electronics. 11:105-109
The operation characteristics of polymer light-emitting diodes (PLEDs) are strongly dependent on materials, processing and the structure of the device. The device structure developed at Philips Research is presented together with some typical results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33abcb0896071741133a7871acda9e5e
https://doi.org/10.1023/a:1008965012042
https://doi.org/10.1023/a:1008965012042
Autor:
Jeroen J. M. Vleggaar, Arjan J. M. Berntsen, H.F.M. Schoo, P. van de Weijer, Richard E. Gill, Coen T. H. F. Liedenbaum, Robert-Jan Visser
Publikováno v:
Optical Materials. 12:183-187
In order to exploit the extensive potential of polymer light-emitting diodes in commercial applications a number of lifetime specifications have to be met. In this paper we report on the performance and stability of polymer light-emitting diodes base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d888279ff30964a7d627844d64898be3
https://doi.org/10.1016/s0925-3467(99)00049-x
https://doi.org/10.1016/s0925-3467(99)00049-x
Autor:
H.F.M. Schoo, Jeroen J. M. Vleggaar, Coen T. H. F. Liedenbaum, Y. Croonen, Robert-Jan Visser, Peter van de Weijer, Arjan J. M. Berntsen
Publikováno v:
Optical Materials. 9:125-133
Polymer LEDs have a number of attractive properties that make them suitable for many applications. Operating at low voltage, bright large-area devices can be made by simple technology. One of the limitations that prohibited industrialization of polym
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1c549b9b5fb5ce9861d9ea1e750eb00
https://doi.org/10.1016/s0925-3467(97)00082-7
https://doi.org/10.1016/s0925-3467(97)00082-7
Autor:
Arjan J. M. Berntsen, Jeroen J. M. Vleggaar, P. van de Weijer, Coen T. H. F. Liedenbaum, Y. Croonen
Publikováno v:
Philips Journal of Research. 51:511-525
In this paper, we report on the lifetime of polymer LEDs fabricated at Philips Research. For single-layer LEDS, we find that the operational lifetime in nitrogen gas is limited by the stability of the indium-tin-oxide (ITO) anode. By using a polymeri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9a7a7cec3da1617d00631d917a5488d
https://doi.org/10.1016/s0165-5817(98)00021-7
https://doi.org/10.1016/s0165-5817(98)00021-7
Publikováno v:
Philosophical Transactions of the Royal Society of London. Series A: Mathematical, Physical and Engineering Sciences. 355:695-706
In this paper we describe a quantitative approach to the photochemical degradation of a soluble dialkoxy–PPV that was also used to make polymer light–emitting diodes. We have defined a quantum yield for degradation (γ) and investigated the depen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddd6a22c051970c1b4c5d9e4891567c3
https://doi.org/10.1098/rsta.1997.0036
https://doi.org/10.1098/rsta.1997.0036
Publikováno v:
Materials Chemistry and Physics. 46:140-146
We describe the effects of implantation of silicon into pure amorphous silicon and hydrogenated amorphous silicon and of erbium into soda-lime silicate glass and hydrogenated amorphous silicon. The former implantations and subsequent annealing treatm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af6b91385b03c81eeae026a53d638b4c
https://doi.org/10.1016/s0254-0584(97)80007-7
https://doi.org/10.1016/s0254-0584(97)80007-7
Publikováno v:
Journal of Applied Physics. 78:1964-1967
Hydrogenated amorphous silicon (a‐Si:H) films were grown in an rf‐plasma deposition system on various substrates. The thickness of the films ranged from 11 to 579 nm. The structural properties of the films were studied by means of ex situ Raman s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02efc2b40ce7991e4fe223a4eba6b445
https://doi.org/10.1063/1.360168
https://doi.org/10.1063/1.360168
Autor:
J.Th.M. De Hosson, Rudi A. Hakvoort, Marcel J. W. Greuter, A. van Veen, A. J. M. Berntsen, L. Niesen, Marc Verwerft, Willem G. Sloof
Publikováno v:
Journal of Applied Physics, 77(7), 3467-3478. AMER INST PHYSICS
Amorphous Si layers were grown by krypton plasma sputter deposition at 310 °C. By pulsation of the substrate potential between 0 and 50 eV, the Kr concentration in the layers could be varied to a maximum of 5.5 at. %. A model which describes trappin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5bcfe27d1a390795d558b3e6e062bed7
https://doi.org/10.1063/1.358641
https://doi.org/10.1063/1.358641
Autor:
W.G.J.H.M. van Sark, W. F. van der Weg, A. J. M. Berntsen, H. Herremans, J. Bezemer, R.A.C.M.M. van Swaaij
Publikováno v:
Journal of Applied Physics. 76:251-256
Infrared spectra of a‐Si1−xCx:H deposited in a glow discharge of a silane/methane mixture have been measured. Comparison with elastic recoil detection and Rutherford backscattering spectrometry shows that the mean number of hydrogen atoms attache
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6ab84788577ba5bd5511fbaac6aa004
https://doi.org/10.1063/1.357136
https://doi.org/10.1063/1.357136
Contribution of defects to electronic, structural, and thermodynamic properties of amorphous silicon
Autor:
Peter Stolk, A. J. M. Berntsen, W. F. van der Weg, Gerhard Müller, G. Krötz, F.W. Saris, R.C. Barklie, L. Sealy
Publikováno v:
Journal of Applied Physics. 75:7266-7286
The structure of pure, nonhydrogenated amorphous silicon (a‐Si) was modified by means of ion implantation, furnace annealing, and pulsed laser annealing. Defects in a‐Si were probed by measuring the photocarrier lifetime τ at low carrier densiti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::956e2d5127a2f702620d7ea5fae38ff3
https://doi.org/10.1063/1.356662
https://doi.org/10.1063/1.356662