Zobrazeno 1 - 10
of 149
pro vyhledávání: '"A. J. Garcia Loureiro"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 479-485 (2024)
The scaling of nanosheet (NS) field effect transistors (FETs) from the 12 nm gate length to the ultimate gate length of 10 nm for sub-2 nm nodes brings additional technological challenges. Here, 3D finite element Monte Carlo simulations are employed
Externí odkaz:
https://doaj.org/article/36b67397a7ac43a5aec29b1814884559
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 469-475 (2021)
The gate-all-around nanowire FET (GAA NW FET) is one of the most promising architectures for the next generation of transistors as it provides better performance than current mass-produced FinFETs, but it has been proven to be strongly affected by va
Externí odkaz:
https://doaj.org/article/2c8d9fa3f5d749119a32eb57395a7c4a
Publikováno v:
IEEE Access, Vol 9, Pp 90568-90576 (2021)
In this work, a simulation methodology, whose inputs are Conductive Atomic Force Microscope (CAFM) experimental data, is proposed to evaluate the impact of nanoscale variability sources related to the polycrystallization of high-k dielectrics (i.e.,
Externí odkaz:
https://doaj.org/article/56b7601c4aed4bf89520d780db262f12
Autor:
Daniel Nagy, Gabriel Espineira, Guillermo Indalecio, Antonio J. Garcia-Loureiro, Karol Kalna, Natalia Seoane
Publikováno v:
IEEE Access, Vol 8, Pp 53196-53202 (2020)
Nanosheet (NS) and nanowire (NW) FET architectures scaled to a gate length (LG) of 16 nm and below are benchmarked against equivalent FinFETs. The device performance is predicted using a 3D finite element drift-diffusion/Monte Carlo simulation toolbo
Externí odkaz:
https://doaj.org/article/a31dac95596644cb9af7c7247f5ee306
Autor:
Daniel Nagy, Guillermo Indalecio, Antonio J. Garcia-Loureiro, Gabriel Espineira, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane
Publikováno v:
IEEE Access, Vol 7, Pp 12790-12797 (2019)
Variability of semiconductor devices is seriously limiting their performance at nanoscale. The impact of variability can be accurately and effectively predicted by computer-aided simulations in order to aid future device designs. Quantum corrected (Q
Externí odkaz:
https://doaj.org/article/333d34e54e304286a6e662d115e50c35
Autor:
Daniel Nagy, Guillermo Indalecio, Antonio J. Garcia-Loureiro, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 332-340 (2018)
Performance, scalability, and resilience to variability of Si SOI FinFETs and gate-all-around (GAA) nanowires (NWs) are studied using in-house-built 3-D simulation tools. Two experimentally based devices, a 25-nm gate length FinFET and a 22-nm GAA NW
Externí odkaz:
https://doaj.org/article/edf10bca70f14f7dbb5c1f513b0fb80b
Autor:
Guillermo Indalecio, Antonio J. Garcia-Loureiro, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 601-610 (2018)
Standard analysis of variability sources in nanodevices lacks information about the spatial influence of the variability. However, this spatial information is paramount for the industry and academia to improve the design of variability-resistant arch
Externí odkaz:
https://doaj.org/article/caf875cd78c84318ad4d4b5049fe85a8
Autor:
Antonio J. Garcia-Loureiro, Natalia Seoane, Florencia Almonacid, Celia Outes, Eduardo F. Fernández
Publikováno v:
IEEE Electron Device Letters. 42:1882-1885
High power laser transmission is being intensively researched as a potential solution to transfer power to remote systems, being the power converter (PC) one of the main limiting factor to improve the system efficiency ( $\eta $ ). Current PCs are mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec76210af8e3a09d1a4691d44e7a57e3
https://doi.org/10.1109/led.2021.3121501
https://doi.org/10.1109/led.2021.3121501
Autor:
Najoua Turki Kamoun, Maher Tlili, Antonio J. Garcia-Loureiro, Z. Seboui, Samar Dabbabi, Neila Jebbari
Publikováno v:
International Journal of Modelling and Simulation. 42:561-569
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69b8e40689e6f4dad7ff7ec4ba7c2933
https://doi.org/10.1080/02286203.2021.1945896
https://doi.org/10.1080/02286203.2021.1945896
Publikováno v:
Progress in Photovoltaics: Research and Applications. 29:231-237
The efficiency of solar cells can be enhanced by increasing the light intensity and/or the number of bandgaps of the structure. However, current solar cells cannot fully exploit these two factors because of various critical drawbacks. Here, we show a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab34198c47d861d91b788ab25661fd66
https://doi.org/10.1002/pip.3369
https://doi.org/10.1002/pip.3369