Zobrazeno 1 - 6
of 6
pro vyhledávání: '"A. J. Bariya"'
Publikováno v:
Journal of The Electrochemical Society. 137:2575-2581
Plasma polymerization in CHF 3 glow discharges is investigated in a bell jar type RIE system. The rate of polymerization in A/min is studied as a function of dc self-bias, the composition of the deposited polymer is determined by XPS. A model is prop
Autor:
M. Mazhar IslamRaja, A. J. Bariya, K. C. Saraswat, M.A. Cappelli, J.P. McVittie, L. Moberly, R. Lahri
Publikováno v:
30th International Reliability Physics Symposium.
Autor:
Krishna C. Saraswat, R. Lahri, L. Moberly, James P. McVittie, Mark A. Cappelli, Anand J. Bariya, M. M. IslamRaja
Publikováno v:
30th Annual Proceedings Reliability Physics 1992.
Design rules for the fabrication of reliable tungsten via plugs, produced using blanket tungsten deposition and etch-back, have been developed using experimental results and computer simulations. Fast computer simulations have been used to define the
Autor:
James P. McVittie, Anand J. Bariya, Krishna C. Saraswat, L.-Y. Cheng, M. M. IslamRaja, S. Ravi, J.C. Rey
Publikováno v:
Advanced Techniques for Integrated Circuit Processing.
SPEEDIE is a new physically based profile simulator for dry etching and LPCVD. It calculates angular and energy distributions of ions and fast neutrals using a Monte Carlo (MC) simulator for ion sheath transport. Fluxes at each point on the profile c
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:1
The etching of CHF3 plasma polymer in fluorine containing electrical discharges was studied. The fluorine sources were SF6, CF4, and mixtures of the two. For discharges in SF6 and mixtures of SF6 and CF4, a good correlation was obtained between the e
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 6:1402-1406
Specific contact resistivity measurements have been performed on Ohmic contacts formed by etching in a CHF3/O2 reactive ion etching plasma, to determine the extent to which this process affects contact resistance. Contacts between n+ (Ns≊1020 cm−