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pro vyhledávání: '"A. I. Yazlyeva"'
Publikováno v:
Semiconductors. 31:11-14
The electrical characteristics and the photovoltage on Pd-p 0-Si-p-Si diode structures with a disordered (porous) p 0 layer of Si have been measured. The current-transfer mechanism is assumed to be double injection of electrons and holes into the p 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75e4b18bf289af0d5bf6bd12bea9d25e
https://doi.org/10.1134/1.1187325
https://doi.org/10.1134/1.1187325
