Zobrazeno 1 - 10
of 62
pro vyhledávání: '"A. I. Veinger"'
Autor:
N. A. Poklonski, A. N. Dzeraviaha, S. A. Vyrko, A. G. Zabrodskii, A. I. Veinger, P. V. Semenikhin
Publikováno v:
AIP Advances, Vol 11, Iss 5, Pp 055016-055016-9 (2021)
For the first time, a quantitative model of the Curie–Weiss behavior of a low-temperature paramagnetic susceptibility of electrically neutral donors in n-type diamagnetic covalent semiconductors is proposed. The exchange interaction between nearest
Externí odkaz:
https://doaj.org/article/33d2d90afa7f4b179a9863ed27d29481
Publikováno v:
Semiconductors. 53:1375-1380
Features of magnetic-field-dependent microwave absorption in HgSe samples doped with Co and Ni impurities in different concentrations are investigated. The electron-spin resonance spectra of weakly coupled Co atoms and peculiarities of the magnetic-a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f77bbbd3ba6ee1d79afa3465ae8bffe
https://doi.org/10.1134/s1063782619100233
https://doi.org/10.1134/s1063782619100233
Autor:
M. D. Andriichuk, V. I. Okulov, A. I. Veinger, T. A. Govorkova, L. D. Paranchich, I. V. Kochman
Publikováno v:
Semiconductors. 53:298-303
The electron-spin-resonance spectra of transition metal ions Fe in the HgSe matrix are analyzed. The spectra have an appearance typical of the Fe3+ ion, i.e., they consist of five fine-structure lines with a splitting that corresponds to a weak cryst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1673cf89aa181111c6e65cb34b1d441d
https://doi.org/10.1134/s1063782619030199
https://doi.org/10.1134/s1063782619030199
Publikováno v:
Semiconductors. 52:1672-1676
Samples of a gapless HgSe semiconductor with different iron impurity concentrations are investigated. HgSe:Fe samples are examined by the electron-spin-resonance technique. Multiple resonance lines caused by unpaired spins of different origins are an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3a8428c355590b5488a7c2e2e1b9e66
https://doi.org/10.1134/s1063782618130225
https://doi.org/10.1134/s1063782618130225
Publikováno v:
Semiconductors. 52:980-985
Magnetoresistance oscillations are considered in the case of microwave-radiation absorption in HgSe samples with a different Fe-impurity concentration. From the simultaneous analysis of the field and temperature dependences of the Shubnikov–de Haas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41718bfed1bf533e05dac2c10ef06f84
https://doi.org/10.1134/s1063782618080237
https://doi.org/10.1134/s1063782618080237
Publikováno v:
Semiconductors. 51:163-167
The low-temperature magnetoresistive effect in the semiconductor HgSe:Fe in weak magnetic fields at microwave frequencies is examined. The negative and positive components of magnetoabsorption based on the magnetoresistive effect in the degenerate co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3e3154ccf5d98dc7bad60480781c5c6
https://doi.org/10.1134/s1063782617020233
https://doi.org/10.1134/s1063782617020233
Autor:
S. I. Goloshchapov, T. V. Tisnek, A. I. Veinger, T. L. Makarova, P. V. Semenikhin, A. G. Zabrodskii
Publikováno v:
Semiconductors. 49:1294-1301
The method of superconducting quantum interference device (SQUID) magnetometry is used to measure and study low-temperature (T ≤ 100K) susceptibility in a series of samples of heavily doped Ge:As samples on the insulator side of the insulator–met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f186b87cea6421a8cdad6d28fc1ebdd
https://doi.org/10.1134/s1063782615100267
https://doi.org/10.1134/s1063782615100267
Determination of the magnetic susceptibility of 'poor' conductors by electron paramagnetic resonance
Publikováno v:
Technical Physics. 58:1806-1811
We consider a method for determining the magnetic susceptibility of “poor” conductors using electron paramagnetic resonance data. A method is described on the basis of double integration of the positive part of the derivative of the absorption li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31e914fa7f3f7cd252cb53930ba1dcf1
https://doi.org/10.1134/s1063784213120256
https://doi.org/10.1134/s1063784213120256
Autor:
S. I. Goloshchapov, A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, T. L. Makarova, P. V. Semenikhin
Publikováno v:
Journal of Experimental and Theoretical Physics. 116:796-799
The phenomenon of the low-temperature transition from antiferro- to ferromagnetic ordering of impurity spins in a nonmagnetic compensated n-Ge:As semiconductor near the metal-insulator phase transformation has been experimentally observed. The effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea6e239e480d2ab9c326354835b7d099
https://doi.org/10.1134/s1063776113050142
https://doi.org/10.1134/s1063776113050142
Publikováno v:
Semiconductors. 45:1264-1272
The microwave magnetoresistivity of lightly doped (nondegenerate) p-Ge has been studied by the electron spin resonance method. This technique can be employed to record the derivative of the microwave absorption with respect to the magnetic field on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a86ccb2d8cbdf2d49f273fc5624a4208
https://doi.org/10.1134/s106378261110023x
https://doi.org/10.1134/s106378261110023x