Výsledky vyhledávání - "A. I. Petrosyan"

The Use of Silicon Dioxide Films as Anti-Reflective Coating of Thermoelectric Single-Photon Detector

Autor: S. I. Petrosyan, G. R. Badalyan, Armen S. Kuzanyan, A. A. Kuzanyan

Publikováno v: Journal of Contemporary Physics (Armenian Academy of Sciences). 55:365-370

Antireflection layers are an important part of the sensitive elements of high performance single photon detectors. We have obtained amorphous silicon dioxide films by electron-beam sputtering on Al2O3, AlN, Si substrates as well as CeB6, LaB6, and W

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::38574a199b8e0989005da3cb55b1259b
https://doi.org/10.3103/s1068337220040106

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On the Derivatives of Cauchy-Type Integrals in the Polydisk

Autor: A. I. Petrosyan

Publikováno v: Journal of Contemporary Mathematical Analysis (Armenian Academy of Sciences). 55:303-306

In the paper the formulas for derivatives of the Cauchy type integral K[f] of smooth functions f on the distinguished boundary of a polydisc are given. These formulas express the derivatives of orderm from K[f] through the derivatives of lower order

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::41dc9b5f9919c1a8d82186a172349b2e
https://doi.org/10.3103/s1068362320050040

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Electron Beam Deposition of Lanthanum Hexaboride Films for Usage as Anti-Reflective Coating

Autor: S. I. Petrosyan, V. S. Kuzanyan, Armen S. Kuzanyan, A. A. Kuzanyan, G. R. Badalyan

Publikováno v: Journal of Contemporary Physics (Armenian Academy of Sciences). 55:164-170

The development of effective anti-reflective coatings of electromagnetic radiation is a necessary basis to solve a wide range of fundamental and applied problems. We studied the conditions for the preparation of lanthanum hexaboride (LaB6) films by e

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c0899f6e654c40e87680b51d72fa8d22
https://doi.org/10.3103/s1068337220020073

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Electric Noise in Field-Effect Transistors Based on ZnO:Li Films

Autor: S. I. Petrosyan, R. K. Hovsepyan, Natella Aghamalyan, G. G. Mnatsakanyan, E. A. Kafadaryan, A. A. Arakelyan

Publikováno v: Journal of Contemporary Physics (Armenian Academy of Sciences). 55:157-163

The noise characteristics of field-effect transistors based on ZnO: Li films and obtained by the diffusion technology are studied. The results of an experimental study of the noise characteristics of the drain current are presented, namely, the Rando

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ff47299bf0c8acad00e69b4bc9871a64
https://doi.org/10.3103/s1068337220020127

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Effect of Annealing on the Current-Voltage Characteristics of the Ag/GaZnO/FTO Structure

Autor: Natella Aghamalyan, R. K. Hovsepyan, Y. Kafadaryan, G. R. Badalyan, A. K. Papikyan, I. A. Gambaryan, S. I. Petrosyan

Publikováno v: Journal of Contemporary Physics (Armenian Academy of Sciences). 55:38-45

Using the method of electron beam evaporation, the conductive films of gallium doped (1.6 at%) zinc oxide (GZO) were obtained. As the upper and lower electrodes, silver and glass substrates coated with tin oxide doped with fluorine (FTO) were used, r

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9fc4c3eac81aee3cd41f887782afca76
https://doi.org/10.3103/s1068337220010065

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Some Spaces of Harmonic Functions in the Unit Ball of ℝn

Autor: A. I. Petrosyan

Publikováno v: Lobachevskii Journal of Mathematics. 40:1132-1136

We introduce the Banach spaces h∞(ϕ), h0(ϕ) and h1(ψ) functions harmonic in the unit ball B ⊂ ℝn. These spaces depend on weight functions ϕ, ψ. We prove that if ϕ and ψ form a normal pair, then h1(ψ)* ∼ h∞(ϕ) and h0(ϕ)* ∼ h1(ψ)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::689e188f475ff4777f2d6302e3a49943
https://doi.org/10.1134/s1995080219080213

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Field-Effect Transistor Based on Zinc Oxide Using Diffusion Technology

Autor: A. A. Arakelyan, Natella Aghamalyan, S. I. Petrosyan, R. K. Hovsepyan, Y. Kafadaryan, H. G. Mnatsakanyan

Publikováno v: Journal of Contemporary Physics (Armenian Academy of Sciences). 54:287-295

Based on the technology developed by authors of the local diffusion doping of certain parts of the ZnO film of the donor (Ga) and acceptor (Li) impurities, a transparent field-effect transistor with the n-type channel was manufactured. The MgF2 films

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d6d5f3382c8912a7ead0dd0bc0f615bc
https://doi.org/10.3103/s1068337219030095

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