Zobrazeno 1 - 10
of 33
pro vyhledávání: '"A. I. Kochkova"'
Autor:
A. Y. Polyakov, In-Hwan Lee, N. B. Smirnov, E. B. Yakimov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, A. A. Vasilev, P. H. Carey, F. Ren, David J. Smith, S. J. Pearton
Publikováno v:
APL Materials, Vol 7, Iss 6, Pp 061102-061102-7 (2019)
Films of β-Ga2O3 grown by halide vapor phase epitaxy on native substrates were subjected to Ar inductively coupled plasma treatment. As a result, the built-in voltage of Ni Schottky diodes deposited on the plasma treated surfaces decreased from 1 V
Externí odkaz:
https://doaj.org/article/03dbaf3babd448b4b9bab112afdbef5f
Autor:
Dae-Woo Jeon, Hoki Son, Jonghee Hwang, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, A. V. Chernykh, A. I. Kochkova, S. J. Pearton, In-Hwan Lee
Publikováno v:
APL Materials, Vol 6, Iss 12, Pp 121110-121110-9 (2018)
Undoped epitaxial films of α-Ga2O3 were grown on basal plane sapphire substrates by halide vapor phase epitaxy (HVPE) in three different modes: standard HVPE, HVPE with constant flow of Ga and pulsed supply of O2 (O2-control growth regime), and with
Externí odkaz:
https://doaj.org/article/d19f53f54cca4ee28bf9b16849577186
Autor:
Alexander Y. Polyakov, Eugene B. Yakimov, Vladimir I. Nikolaev, Alexei I. Pechnikov, Andrej V. Miakonkikh, Alexander Azarov, In-Hwan Lee, Anton A. Vasilev, Anastasiia I. Kochkova, Ivan V. Shchemerov, Andrej Kuznetsov, Stephen J. Pearton
Publikováno v:
Crystals, Vol 13, Iss 9, p 1400 (2023)
In this study, the results of hydrogen plasma treatments of β-Ga2O3, α-Ga2O3, κ-Ga2O3 and γ-Ga2O3 polymorphs are analyzed. For all polymorphs, the results strongly suggest an interplay between donor-like hydrogen configurations and acceptor compl
Externí odkaz:
https://doaj.org/article/86f41d6f923e407ea9ebcca20a4c85fd
Autor:
A. Y. Polyakov, A. Kuznetsov, A. Azarov, A. V. Miakonkikh, A. V. Chernykh, A. A. Vasilev, I. V. Shchemerov, A. I. Kochkova, N. R. Matros, S. J. Pearton
Publikováno v:
Journal of Materials Science: Materials in Electronics. 34
Autor:
A. Y. Polyakov, V. I. Nikolaev, A. I. Pechnikov, E. B. Yakimov, P. B. Lagov, I. V. Shchemerov, A. A. Vasilev, A. I. Kochkova, A. V. Chernykh, In-Hwan Lee, S. J. Pearton
Publikováno v:
Journal of Vacuum Science & Technology A. 41
Changes induced by irradiation with 1.1 MeV protons in the transport properties and deep trap spectra of thick (>80 μm) undoped κ-Ga2O3 layers grown on sapphire are reported. Prior to irradiation, the films had a donor concentration of ∼1015 cm
Autor:
A Y Polyakov, V I Nikolaev, A I Pechnikov, P B Lagov, I V Shchemerov, A A Vasilev, A V Chernykh, A I Kochkova, L Guzilova, Yu S Pavlov, T V Kulevoy, A S Doroshkevich, R Sh Isaev, A V Panichkin, S J Pearton
Publikováno v:
Journal of Physics D: Applied Physics. 56:305103
Films of α-Ga2O3 (Sn) grown by halide vapor phase epitaxy on sapphire with donor densities in the range 5 × 1015–8.4 × 1019 cm−3 were irradiated at 25 °C with 1.1 MeV protons to fluences from 1013 to 1016 cm−2. For the lowest doped samples,
Autor:
A. Y. Polyakov, A. V. Almaev, V. I. Nikolaev, A. I. Pechnikov, V. I. Shchemerov, A. A. Vasilev, E. B. Yakimov, A. I. Kochkova, V. V. Kopyev, B. O Kushnarev, S. J. Pearton
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:045002
Deep centers and their influence on photocurrent spectra and transients were studied for interdigitated photoresistors on α-Ga2O3 undoped semi-insulating films grown by Halide Vapor Phase Epitaxy (HVPE) on sapphire. Characterization involving curren
Autor:
A. Y. Polyakov, А. I. Kochkova, A. Azarov, V. Venkatachalapathy, A. V. Miakonkikh, A. A. Vasilev, A. V. Chernykh, I. V. Shchemerov, A. A. Romanov, A. Kuznetsov, S. J. Pearton
Publikováno v:
Journal of Applied Physics. 133:095701
Ion beam fabrication of metastable polymorphs of Ga2O3, assisted by the controllable accumulation of the disorder in the lattice, is an interesting alternative to conventional deposition techniques. However, the adjustability of the electrical proper
Autor:
A. Y. Polyakov, A. I. Kochkova, Amanda Langørgen, Lasse Vines, A. Vasilev, I. V. Shchemerov, A. A. Romanov, S. J. Pearton
Publikováno v:
Journal of Vacuum Science & Technology A. 41:023401
The electric field dependence of emission rate of the deep traps with level near Ec−0.6 eV, so-called E1 traps, was studied by means of deep level transient spectroscopy measurements over a wide range of applied voltages. The traps were initially i
Autor:
V. I. Nikolaev, A. Y. Polyakov, S. I. Stepanov, A. I. Pechnikov, E. B. Yakimov, A. V. Chernykh, A. A. Vasilev, I. V. Shchemerov, A. I. Kochkova, L. Guzilova, M. P. Konovalov, S. J. Pearton
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:115002
Two-inch diameter α-Ga2O3 films with thickness ∼4 μm were grown on basal plane sapphire by Halide Vapor Phase Epitaxy (HVPE) and doped with Sn in the top ∼1 μm from the surface. These films were characterized with High-Resolution X-ray Diffrac