Zobrazeno 1 - 3
of 3
pro vyhledávání: '"A. I. Berasnevich"'
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 20, Iss 4, Pp 36-43 (2022)
When evaluating the individual reliability of semiconductor devices by gradual failures for a given operating time, the value of the electrical parameter of a particular instance for this operating time is predicted using the simulation method. To ob
Externí odkaz:
https://doaj.org/article/f7c51d510fb14ab99b1354c3e9dc8e43
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 5, Pp 80-88 (2020)
Individual forecasting of the reliability of semiconductor devices, taking into account gradual failures, is an urgent task, as it allows you to choose highly reliable instances for critical electronic devices of long-term functioning. In relation to
Externí odkaz:
https://doaj.org/article/9389fe4c73a04b3fb1d50cc2c6da93d6
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 2, Pp 45-52 (2019)
With the help of accelerated tests we have obtained experimental data about the degradation of the functional parameters of three types of high-power transistors as the representatives of electronic products. Histograms of parameters’ distribution
Externí odkaz:
https://doaj.org/article/1b37323da2c34db790aed0fc518be0d6