Zobrazeno 1 - 10
of 26
pro vyhledávání: '"A. Houadef"'
Autor:
Houadef, Ali, Djezzar, Boualem
Publikováno v:
In Microelectronics Reliability September 2022 136
Autor:
Houadef, Ali1 (AUTHOR) a.houadef@univ-boumerdes.dz, Djezzar, Boualem2 (AUTHOR)
Publikováno v:
International Journal of RF & Microwave Computer-Aided Engineering. Oct2021, Vol. 31 Issue 10, p1-12. 12p.
Earthworm effect on invertebrate community under Olive tree ecosystem in Semi-arid Region of Algeria
Publikováno v:
Polish Journal of Entomology. 91:11-22
The biodiversity of the invertebrate community in the soil is greatly influenced by the presence of earthworms, which are also influenced by variations in the physicochemical and biological characteristics of the soil as well as the climate and the e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0e649953ba58220642939821b8f8820
https://doi.org/10.5604/01.3001.0015.7768
https://doi.org/10.5604/01.3001.0015.7768
Autor:
Boualem Djezzar, Ali HOUADEF
Publikováno v:
Algerian Journal of Signals and Systems. 6:16-23
Hot carrier stress is evaluated on a laterally diffused MOSFET (LDMOS) by TCAD simulation. The device under test is obtained from process simulation under a 1µm CMOS flow available at CDTA. The n-type transistor uses the LOCOS (local oxidation of si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfdec136f95a80ae64167531186d6eb8
https://doi.org/10.51485/ajss.v6i1.2
https://doi.org/10.51485/ajss.v6i1.2
Autor:
Boualem Djezzar, Ali HOUADEF
Publikováno v:
ICCEIS 2021.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b38639a60ece1a919ecf9350f55e1c4f
https://doi.org/10.3390/engproc2022014017
https://doi.org/10.3390/engproc2022014017
Autor:
Boualem Djezzar, Ali HOUADEF
Publikováno v:
ICCEIS 2021.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12ef0139d15242bcf9f111829ab94b86
https://doi.org/10.3390/engproc2022014016
https://doi.org/10.3390/engproc2022014016
Autor:
A. Houadef, Boualem Djezzar
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL).
This work investigates by TCAD simulation the impact of hot carrier degradation (HCD) in an nLDMOS that uses many topological features. The trenched gate and the triple-RESURF used to optimally reduce the device on-resistance $(R_{ON})$ , triggers DC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36109d6951cdf83dabe5afe6f2110934
https://doi.org/10.1109/miel52794.2021.9569100
https://doi.org/10.1109/miel52794.2021.9569100
Autor:
Ali Houadef, Boualem Djezzar
Publikováno v:
International Journal of RF and Microwave Computer-Aided Engineering. 31
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3469b9afafd8f75ca32c88cf8d7dec1d
https://doi.org/10.1002/mmce.22755
https://doi.org/10.1002/mmce.22755
Autor:
Ali Houadef, Boualem Djezzar
Publikováno v:
Microelectronics Reliability. 136:114636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14e187f648c49df3c92ec712f95ec648
https://doi.org/10.1016/j.microrel.2022.114636
https://doi.org/10.1016/j.microrel.2022.114636
Autor:
Boualem Djezzar, Ali Houadef
Publikováno v:
2020 International Conference on Electrical Engineering (ICEE).
Physically based device simulation of hot carrier injection (HCI) degradation is performed. The device under test is a LOCOS (local oxidation of silicon) based, single RESURF (reduced surface field), LDMOS (laterally diffused MOSFET). The transistor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d922e56878598778a4eb5579cc1761a
https://doi.org/10.1109/icee49691.2020.9249844
https://doi.org/10.1109/icee49691.2020.9249844