Zobrazeno 1 - 10
of 1 694
pro vyhledávání: '"A. Hassa"'
Publikováno v:
APL Materials, Vol 8, Iss 5, Pp 051112-051112-14 (2020)
High quality heteroepitaxial (001)-oriented κ-(AlxGa1−x)2O3/κ-Ga2O3 quantum well superlattice heterostructures were deposited by tin-assisted pulsed laser deposition on c-sapphire substrates. Sharp superlattice fringes up to the ninth order in XR
Externí odkaz:
https://doaj.org/article/8fd8f8500f85490a84d16e6c98a92bf1
Autor:
A. Hassa, C. Sturm, M. Kneiß, D. Splith, H. von Wenckstern, T. Schultz, N. Koch, M. Lorenz, M. Grundmann
Publikováno v:
APL Materials, Vol 8, Iss 2, Pp 021103-021103-6 (2020)
A ternary, orthorhombic κ-(AlxGa1−x)2O3 thin film was synthesized by combinatorial pulsed laser deposition on a 2 in. in diameter c-sapphire substrate with a composition gradient. Structural, morphological, and optical properties were studied as a
Externí odkaz:
https://doaj.org/article/8ae36c0f84a54d72aed51bf4d37d0b0c
Autor:
P. Storm, M. Kneiß, A. Hassa, T. Schultz, D. Splith, H. von Wenckstern, N. Koch, M. Lorenz, M. Grundmann
Publikováno v:
APL Materials, Vol 7, Iss 11, Pp 111110-111110-8 (2019)
The structural, surface, and optical properties of phase-pure κ-(AlxGa1−x)2O3 thin films on c-sapphire and STO(111):Nb substrates as well as on MgO(111) and κ-Ga2O3 templates are reported as a function of alloy composition for x < 0.4. The thin f
Externí odkaz:
https://doaj.org/article/a443fe0370e7462bafdf4f22f3e46a91
Publikováno v:
APL Materials, Vol 7, Iss 10, Pp 101102-101102-10 (2019)
High-quality (InxGa1−x)2O3 thin films in the orthorhombic κ-phase were grown by pulsed-laser deposition (PLD) on c-sapphire substrates as well as PLD-grown κ-Ga2O3 thin film templates. We varied the In-content 0 ≤ x ≤ 0.38 of the layers using
Externí odkaz:
https://doaj.org/article/6727c5ddf1594d239ea16c95664a0b3d
Publikováno v:
APL Materials, Vol 7, Iss 7, Pp 079901-079901-1 (2019)
Externí odkaz:
https://doaj.org/article/74abf3d980154df09862c96fe00b5e7f
Autor:
M. Kneiß, A. Hassa, D. Splith, C. Sturm, H. von Wenckstern, T. Schultz, N. Koch, M. Lorenz, M. Grundmann
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022516-022516-11 (2019)
High-quality Ga2O3 thin films in the orthorhombic κ-phase are grown by pulsed-laser deposition using a tin containing target on c-sapphire, MgO(111), SrTiO3(111), and yttria-stabilized ZrO2(111) substrates. The structural quality of the layers is st
Externí odkaz:
https://doaj.org/article/d68b969b54b643e89deb6e0260fc8f78
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022525-022525-9 (2019)
Material properties of orthorhombic κ-phase (InxGa1−x)2O3 thin films grown on a c-plane sapphire substrate by pulsed-laser deposition are reported for an indium content up to x ∼ 0.35. This extended range of miscibility enables band gap engineer
Externí odkaz:
https://doaj.org/article/87e6d422a19145e8901c5f3f915fec4b
Publikováno v:
In Global Ecology and Conservation October 2024 54
Autor:
Heyer, Robert, Hellwig, Patrick, Maus, Irena, Walke, Daniel, Schlüter, Andreas, Hassa, Julia, Sczyrba, Alexander, Tubbesing, Tom, Klocke, Michael, Mächtig, Torsten, Schallert, Kay, Seick, Ingolf, Reichl, Udo, Benndorf, Dirk
Publikováno v:
In Water Research 15 February 2024 250
Publikováno v:
In Carbon Resources Conversion April 2024