Výsledky vyhledávání - "A. H. Abdullah Ripain"

Contributions of symmetric metal contacts on liquid exfoliation 2D-MoS2 flakes based MSM photodetector by spray pyrolysis: a CVD-free technique

Autor: A. H. Abdullah Ripain, N. A. A. Zulkifli, C. L. Tan, W. H. Abd Majid, R. Zakaria

Publikováno v: Optical and Quantum Electronics. 54

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c6ed79c1d4c5ed57f6d1f3a97df034d7
https://doi.org/10.1007/s11082-022-04253-y

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Tailoring of optical and wetting properties of electron beam deposited Ag nanostructure films by oblique angle deposition

Autor: A. H. Abdullah Ripain, Y. F. Lim, C. S. Lim, R. Zakaria

Publikováno v: Journal of Optics.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f8e8459c1d0146566e1c963875323a29
https://doi.org/10.1007/s12596-022-00972-3

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Akademický článek

Contributions of symmetric metal contacts on liquid exfoliation 2D-MoS2 flakes based MSM photodetector by spray pyrolysis: a CVD-free technique.

Autor: Abdullah Ripain, A. H.¹ (AUTHOR), Zulkifli, N. A. A.¹ (AUTHOR), Tan, C. L.² (AUTHOR), Abd Majid, W. H.³ (AUTHOR), Zakaria, R.¹ (AUTHOR) rozalina@um.edu.my

Publikováno v: Optical & Quantum Electronics. Dec2022, Vol. 54 Issue 12, p1-15. 15p.

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Akademický článek

Superior AlGaN/GaN-Based Phototransistors and Arrays with Reconfigurable Triple-Mode Functionalities Enabled by Voltage-Programmed Two-Dimensional Electron Gas for High-Quality Imaging.

Autor: Zhang H; iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China., Liang F; iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China., Yang L; iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China., Gao Z; iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China., Liang K; iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China., Liu S; iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China., Ye Y; iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China., Yu H; iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China., Chen W; iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China., Kang Y; iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China., Sun H; iGaN Laboratory, School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China.

Publikováno v: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Sep; Vol. 36 (36), pp. e2405874. Date of Electronic Publication: 2024 Jul 18.

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