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of 2
pro vyhledávání: '"A. Gzregorzyck"'
Publikováno v:
In Journal of Crystal Growth 2008 310(17):3957-3963
Publikováno v:
Journal of Crystal Growth, 310, 17, pp. 3957-3963
Journal of Crystal Growth, 310, 3957-3963
Journal of Crystal Growth, 310, 3957-3963
GaN layers of various thicknesses (40-350 μm) were grown by hydride vapor-phase epitaxy (HVPE) on sapphire substrates and on the metal-organic chemical vapor deposition (MOCVD) grown GaN/Al 2 O 3 templates. The quality of the grown layers on these t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd64dc64c2c23a9d9ad1cb35d54baf7f
https://doi.org/10.1016/j.jcrysgro.2008.06.031
https://doi.org/10.1016/j.jcrysgro.2008.06.031