Zobrazeno 1 - 10
of 370
pro vyhledávání: '"A. Gutierrez-Aitken"'
Autor:
A. Gutierrez-Aitken
Publikováno v:
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022.
Autor:
A. Gutierrez-Aitken
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Heterogeneous integration (HI) has become a key technology development and production effort in the past few years. HI for RF has become an important task for applications such as 5G in the commercial world and for many higher frequency applications
Autor:
Lushalan B. Liao, Augusto Gutierrez-Aitken, K. K. Loi, Richard L. Davis, Mark W. Knight, Stephanie R. Sandor-Leahy, Wayne Yoshida
Publikováno v:
Image Sensing Technologies: Materials, Devices, Systems, and Applications VII.
Northrop Grumman (NG) is developing a photonic waveguide-based imaging spectrometer that promises to dramatically reduce instrument size, weight and power and enable image acquisition in modes not possible with current hyperspectral imagers (HSIs). T
Autor:
Radisic, Vesna, Hester, Jimmy G., Nguyen, Vinh N., Caira, Nicholas W., DiMarzio, Donald, Hilgeman, Theodore, Larouche, Stéphane, Kaneshiro, Eric, Gutierrez-Aitken, Augusto
Publikováno v:
Journal of Applied Physics; 2017, Vol. 121 Issue 16, p1-6, 6p, 5 Diagrams, 6 Graphs
Autor:
Nancy Lin, Xiang Zeng, Khanh Thai, Ioulia Smorchkova, Bryan Wu, Reynold Kagiwada, E. Kaneshiro, Monte Watanabe, K. Sato, Dennis Scott, Benjamin Poust, Cedric Monier, David Slavin, Wesley Chan, Augusto Gutierrez-Aitken, Aaron Oki, Peter Cheng, Sujane Wang, Eric Nakamura
Publikováno v:
IEEE Microwave Magazine. 18:60-73
Semiconductor technology has seen rapid advances in recent years. Complementary?metal-oxide-semiconductor (CMOS) technology is providing tremendous digital processing power by integrating billions of transistors. Indium phosphide (InP) has bridged th
Autor:
Richard L. Davis, Daniel Kultran, Lushalan Liao, Mark W. Knight, K. K. Loi, Stephanie R. Sandor-Leahy, Augusto Gutierrez-Aitken, Wayne Yoshida
Publikováno v:
2019 IEEE Photonics Conference (IPC).
Under the NASA Earth Science Technology Office Sustainable Land Imaging — Technology (SLI-T) program, Northrop Grumman is building and demonstrating a fully integrated photonic hyperspectral imaging spectrometer. In this approach, lithographically
Publikováno v:
IEEE Microwave and Wireless Components Letters. 27:824-826
This letter reports on two power amplifier (PA) monolithic microwave-integrated circuits operating at W-band. The PAs use 250 nm InP HBTs and thin-film microstrip topology formed with benzocyclobutene dielectric. First PA utilizes a two-emitter finge
Autor:
K. K. Loi, Dennis W. Scott, Vesna Radisic, Augusto Gutierrez-Aitken, Cedric Monier, Richard Lai
Publikováno v:
IEEE Microwave and Wireless Components Letters. 27:739-741
We report a heterogeneously integrated W-band downconverter, consisting of a low noise amplifier (LNA) and a star mixer. An LNA is realized in a 0.1- $\mu \text{m}$ InP high-electron-mobility transistor (HEMT) technology and features the noise figure
Autor:
Vesna Radisic, Sujane Wang, Cedric Monier, Dennis W. Scott, E. Kaneshiro, K. K. Loi, Augusto Gutierrez-Aitken
Publikováno v:
2018 IEEE/MTT-S International Microwave Symposium - IMS.
We report on heterogeneously integrated V-band amplifier realized in four layer interconnect InP heterojunction bipolar transistor (HBT). The amplifier chiplet is integrated onto a passive InP carrier wafer with two layers of interconnect using heter
Publikováno v:
RWS
We report on a reconfigurable composite right/left-handed (CRLH) transmission line (TL) using an InP heterojunction bipolar transistor (HBT) fabrication process. A four unit cell-TL design is realized with distributed capacitors and inductors with ea