Zobrazeno 1 - 10
of 61
pro vyhledávání: '"A. Gorreri"'
Autor:
A. Parisini, A. Bosio, V. Montedoro, A. Gorreri, A. Lamperti, M. Bosi, G. Garulli, S. Vantaggio, R. Fornari
Publikováno v:
APL Materials, Vol 7, Iss 3, Pp 031114-031114-6 (2019)
Low resistivity n-type ε-Ga2O3 epilayers were obtained for the first time either by adding silane to the gas phase during the metal organic vapour phase epitaxy deposition or by diffusing Sn in nominally undoped layers after the growth. The highest
Externí odkaz:
https://doaj.org/article/73b3adcc12aa4509a2811e633b11b21e
Autor:
Andrea Katharina Lindner, Martin Pichler, Sarah Maier, Hanno Ulmer, Thomas Gorreri, Anna Katharina Luger, Dominik A. Barth, Andreas Seeber, Florian Kocher, Renate Pichler
Publikováno v:
Frontiers in Oncology, Vol 13 (2023)
Upper tract urothelial carcinoma (UTUC) is an aggressive disease that is managed by radical or organ-sparing surgery. High recurrence rates require early detection and strict follow-up (FU) protocols. Recommendations are assigned to a low level of ev
Externí odkaz:
https://doaj.org/article/7eb421c2f13f4f63b81fb69143fb53e1
Akademický článek
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Autor:
Pontiroli, Daniele, Aramini, Matteo, Gaboardi, Mattia, Mazzani, Marcello, Gorreri, Alessandra, Riccò, Mauro, Margiolaki, Irene, Sheptyakov, Denis
Publikováno v:
In Carbon January 2013 51:143-147
Autor:
Mauron, Philippe, Remhof, Arndt, Bliersbach, Andreas, Borgschulte, Andreas, Züttel, Andreas, Sheptyakov, Denis, Gaboardi, Mattia, Choucair, Mohammad, Pontiroli, Daniele, Aramini, Matteo, Gorreri, Alessandra, Riccò, Mauro
Publikováno v:
In International Journal of Hydrogen Energy October 2012 37(19):14307-14314
Autor:
Edoardo Raposio, Elena Bassi, D. Dallatana, Giusy Di Conza, Fulvio Barbaro, Marco Quarantini, Roberto Toni, Giulia Toscani, Marina Gorreri, Nicoletta Zini, Elia Consolini, Pietro Setti, Enrico Quarantini, Alessandro Porro, S. Mosca
Publikováno v:
J Anat
An academic, anatomist, and Lombrosian psychiatrist active at the University of Parma in Italy at the end of the 19th century, Lorenzo Tenchini produced ceroplastic‐like masks that are unique in the anatomical Western context. These were prepared f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bff2d5342e4b69e560647325cb4ea6d6
https://doi.org/10.1111/joa.13069
https://doi.org/10.1111/joa.13069
Publikováno v:
Advances in Horticultural Science, 1997 Jan 01. 11(3), 115-119.
Externí odkaz:
https://www.jstor.org/stable/42883157
Publikováno v:
In Physica B: Physics of Condensed Matter 2006 374:255-258
Autor:
Árhyna Armond Mendes, Élcio Alves Guimarães, Carlos Eduardo de Aquino Testa, Kelly Duarte Lima Makoul, Kelly Verônica de Melo Sales Barbosa, Alfredo Júlio Fernandes Neto, Mario Antonio Baraúna, Marília Cavalheri Gorreri, Gustavo Augusto Seabra Barbosa, Paulinne Junqueira Silva Andresen Strini
Publikováno v:
Fisioterapia Brasil. 9:264-268
Alterações na coluna cervical podem interferir no sistema muscular do indivíduo, levando inicialmente a uma compensação na cintura escapular devido í sua ligação óssea e neuromuscular. A partir daí, as cadeias musculares atuam por uma s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50318db31d98e09fcf03067ca166a29e
https://doi.org/10.33233/fb.v9i4.1721
https://doi.org/10.33233/fb.v9i4.1721
Autor:
Parisini, A., Bosio, A., Montedoro, V., Gorreri, A., Lamperti, A., Bosi, M., Garulli, G., Vantaggio, S., Fornari, R.
Publikováno v:
APL materials 7 (2019): 031114-1. doi:10.1063/1.5050982
info:cnr-pdr/source/autori:Parisini, A.; Bosio, A.; Montedoro, V.; Gorreri, A.; Lamperti, A.; Bosi, M.; Garulli, G.; Vantaggio, S.; Fornari, R./titolo:Si and Sn doping of epsilon-Ga2O3 layers/doi:10.1063%2F1.5050982/rivista:APL materials/anno:2019/pagina_da:031114-1/pagina_a:/intervallo_pagine:031114-1/volume:7
info:cnr-pdr/source/autori:Parisini, A.; Bosio, A.; Montedoro, V.; Gorreri, A.; Lamperti, A.; Bosi, M.; Garulli, G.; Vantaggio, S.; Fornari, R./titolo:Si and Sn doping of epsilon-Ga2O3 layers/doi:10.1063%2F1.5050982/rivista:APL materials/anno:2019/pagina_da:031114-1/pagina_a:/intervallo_pagine:031114-1/volume:7
Low resistivity n-type epsilon-Ga2O3 epilayers were obtained for the first time either by adding silane to the gas phase during the metal organic vapour phase epitaxy deposition or by diffusing Sn in nominally undopeci, layers after the growth. The h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::ac1f7aa4fb67933a050ffbd60312e22e
