Zobrazeno 1 - 10
of 113
pro vyhledávání: '"A. Goriachko"'
Autor:
A. Goriachko, H. Over
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-6 (2018)
Abstract We report on a scanning tunneling microscopy (STM) study of the nanostructuring of the Au/Ru(0001) thin film system for the cases of 5 monolayers (ML) and 9 ML of Au deposited at 300 K and subsequently annealed at 1050 K. A new laterally per
Externí odkaz:
https://doaj.org/article/9840c086999d40d891dccb804a8f2104
Publikováno v:
In Results in Surfaces and Interfaces 1 October 2023 13
Publikováno v:
Results in Surfaces and Interfaces, Vol 13, Iss , Pp 100151- (2023)
The atomic structure, stoichiometry and electron work function of Ce + O films co-adsorbed on Mo(112) were studied by low-energy electron diffraction (LEED), Auger electron spectroscopy (AES) and contact potential difference (CPD) methods. The films
Externí odkaz:
https://doaj.org/article/4ec266077049472786a4a63aa051d4ae
Autor:
Goriachko, A. M.1 goriachko@knu.ua
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2022, Vol. 25 Issue 4, p379-384. 6p.
Autor:
M. V. Strikha, A. M. Goriachko
Publikováno v:
Sensor Electronics and Microsystem Technologies. 19:23-29
We develop a simple theoretical model, connecting a lowering of the electron affinity of a semiconductor (or insulator) with such parameters as the density of surface charge, localized on surface states or adsorbed atoms, and the volume density of ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d79d75b905cb2914d80fb895cc901f7c
https://doi.org/10.18524/1815-7459.2022.3.265293
https://doi.org/10.18524/1815-7459.2022.3.265293
Autor:
Goriachko, A. M.1, Strikha, M. V.1,2 maksym.strikha@gmail.com
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2021, Vol. 24 Issue 4, p355-361. 7p.
Autor:
Liudmyla M. Grishchenko, Vladyslav A. Moiseienko, Andrii M. Goriachko, Anna V. Vakaliuk, Igor P. Matushko, Oleksandr V. Mischanchuk, Galyna G. Tsapyuk, Olga Yu. Boldyrieva, Vladyslav V. Lisnyak
Publikováno v:
Molecular Crystals and Liquid Crystals. 751:1-9
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::068fbbb02008e8695cea66f9f12ee155
https://doi.org/10.1080/15421406.2022.2073045
https://doi.org/10.1080/15421406.2022.2073045
Autor:
M.V. Strikha, A.M. Goriachko
Publikováno v:
Semiconductor Physics, Quantum Electronics and Optoelectronics. 24:335-361
In this paper, the novel cold electron emitters based on nanostructured SiC layers covering the Si(001) substrate have been proposed. Their main advantage is an extremely simple and cost-effective manufacturing process based on the standard microelec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae25fe1a8474acaac838bc5c16beefca
https://doi.org/10.15407/spqeo24.04.355
https://doi.org/10.15407/spqeo24.04.355
Autor:
A.M. Goriachko, M.V. Strikha
Publikováno v:
Semiconductor Physics, Quantum Electronics and Optoelectronics. 24:399-406
This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with field plate of varying diameters from 50 to 300 µm. The influence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa5126045af6544fa72ee0c32b55c26a
https://doi.org/10.15407/spqeo24.04.399
https://doi.org/10.15407/spqeo24.04.399
Autor:
Liudmyla M. Grishchenko, Vladyslav A. Moiseienko, Andrii M. Goriachko, Volodymyr Yu. Malyshev, Oleksandr V. Mischanchuk, Vladyslav V. Lisnyak, Igor P. Matushko, Galyna G. Tsapyuk, Vyacheslav V. Trachevskiy, Vitaliy E. Diyuk
Publikováno v:
2022 IEEE 41st International Conference on Electronics and Nanotechnology (ELNANO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73d2226be70a1544dd21363af60c15ac
https://doi.org/10.1109/elnano54667.2022.9927037
https://doi.org/10.1109/elnano54667.2022.9927037