Zobrazeno 1 - 10
of 296
pro vyhledávání: '"A. Goriachko"'
Autor:
Goriachko, A. M.1 goriachko@knu.ua
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2022, Vol. 25 Issue 4, p379-384. 6p.
Publikováno v:
In Results in Surfaces and Interfaces 1 October 2023 13
Publikováno v:
Results in Surfaces and Interfaces, Vol 13, Iss , Pp 100151- (2023)
The atomic structure, stoichiometry and electron work function of Ce + O films co-adsorbed on Mo(112) were studied by low-energy electron diffraction (LEED), Auger electron spectroscopy (AES) and contact potential difference (CPD) methods. The films
Externí odkaz:
https://doaj.org/article/4ec266077049472786a4a63aa051d4ae
Autor:
Goriachko, A. M.1, Strikha, M. V.1,2 maksym.strikha@gmail.com
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2021, Vol. 24 Issue 4, p355-361. 7p.
Autor:
A. Goriachko, H. Over
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-6 (2018)
Abstract We report on a scanning tunneling microscopy (STM) study of the nanostructuring of the Au/Ru(0001) thin film system for the cases of 5 monolayers (ML) and 9 ML of Au deposited at 300 K and subsequently annealed at 1050 K. A new laterally per
Externí odkaz:
https://doaj.org/article/9840c086999d40d891dccb804a8f2104
Autor:
M. V. Strikha, A. M. Goriachko
Publikováno v:
Sensor Electronics and Microsystem Technologies. 19:23-29
We develop a simple theoretical model, connecting a lowering of the electron affinity of a semiconductor (or insulator) with such parameters as the density of surface charge, localized on surface states or adsorbed atoms, and the volume density of ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d79d75b905cb2914d80fb895cc901f7c
https://doi.org/10.18524/1815-7459.2022.3.265293
https://doi.org/10.18524/1815-7459.2022.3.265293
Autor:
Liudmyla M. Grishchenko, Vladyslav A. Moiseienko, Andrii M. Goriachko, Anna V. Vakaliuk, Igor P. Matushko, Oleksandr V. Mischanchuk, Galyna G. Tsapyuk, Olga Yu. Boldyrieva, Vladyslav V. Lisnyak
Publikováno v:
Molecular Crystals and Liquid Crystals. 751:1-9
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::068fbbb02008e8695cea66f9f12ee155
https://doi.org/10.1080/15421406.2022.2073045
https://doi.org/10.1080/15421406.2022.2073045
Autor:
Grishchenko, Liudmyla M., Moiseienko, Vladyslav A., Goriachko, Andrii M., Vakaliuk, Anna V., Matushko, Igor P., Mischanchuk, Oleksandr V., Tsapyuk, Galyna G., Boldyrieva, Olga Yu., Lisnyak, Vladyslav V.
Publikováno v:
Molecular Crystals & Liquid Crystals; 2023, Vol. 751 Issue 1, p1-9, 9p
Autor:
M.V. Strikha, A.M. Goriachko
Publikováno v:
Semiconductor Physics, Quantum Electronics and Optoelectronics. 24:335-361
In this paper, the novel cold electron emitters based on nanostructured SiC layers covering the Si(001) substrate have been proposed. Their main advantage is an extremely simple and cost-effective manufacturing process based on the standard microelec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae25fe1a8474acaac838bc5c16beefca
https://doi.org/10.15407/spqeo24.04.355
https://doi.org/10.15407/spqeo24.04.355
Autor:
A.M. Goriachko, M.V. Strikha
Publikováno v:
Semiconductor Physics, Quantum Electronics and Optoelectronics. 24:399-406
This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with field plate of varying diameters from 50 to 300 µm. The influence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa5126045af6544fa72ee0c32b55c26a
https://doi.org/10.15407/spqeo24.04.399
https://doi.org/10.15407/spqeo24.04.399