Zobrazeno 1 - 10
of 51
pro vyhledávání: '"A. Gentselev"'
Publikováno v:
In Physics Procedia 2016 84:165-169
Autor:
A.N. Gentselev, S.G. Baev
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 58:198-205
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::318c18d355d49d1727ced8639b92a888
https://doi.org/10.3103/s8756699022020030
https://doi.org/10.3103/s8756699022020030
Autor:
Alexander Gentselev, Sergei Baev
Publikováno v:
Applied Physics. :75-82
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0544072ab64374c4a048d49af54ee6bc
https://doi.org/10.51368/1996-0948-2022-1-75-82
https://doi.org/10.51368/1996-0948-2022-1-75-82
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 14:1403-1409
A new method for manufacturing a stamp or a mold, which differs from well-known LIGA technology, is described. They can be used to mold biochips of various plastics. A typical sequence of operations in LIGA technology is as follows: the formation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e299cd5347618640533b47ecc1d724c
https://doi.org/10.1134/s1027451020060300
https://doi.org/10.1134/s1027451020060300
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 14:862-865
A simple method for manufacturing silicon masks for deep X-ray lithography, conducted with the application of exposure radiation of the spectral range (0.5–7 A), is described. This method is based on planar silicon technology, which is widely used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5db7950fa5601710bf298f750411fa9d
https://doi.org/10.1134/s1027451020040266
https://doi.org/10.1134/s1027451020040266
Autor:
A. Gentselev
Publikováno v:
ELECTRONICS: SCIENCE, TECHNOLOGY, BUSINESS. 184:180-183
Рассмотрены системы, способные предупреждать появление дефектов электронных изделий в процессе производства. Отмечено, что применение
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ae934677b0b975d9c719bb9a50b6d6b
https://doi.org/10.22184/1992-4178.2019.184.3.180.183
https://doi.org/10.22184/1992-4178.2019.184.3.180.183
Autor:
F. N. Dultsev, D. S. Tanygina, B. G. Goldenberg, V. I. Kondratyev, Sergei A. Kuznetsov, A. N. Gentselev, A. G. Zelinsky
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 55:115-125
A method for fabricating high-pass terahertz quasi-optical filters in the form of thick (up to 1 mm in thickness) self-bearing copper microstructures of subwavelength topology is described. This method is based on forming a high-aspect-ratio mask of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca45048ab74a0324bfe9b82bd7146c3d
https://doi.org/10.3103/s875669901902002x
https://doi.org/10.3103/s875669901902002x
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 54:127-134
A method of fabrication of thick (~100 μm and more) resistive masks is described. These masks can be used for solving various engineering problems, e.g., for fabricating x-ray-absorbing topological patterns for LIGA masks, stamp microrelief, cast mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ab957e0e76f4967af1bec9b665736b8
https://doi.org/10.3103/s8756699018020024
https://doi.org/10.3103/s8756699018020024
Autor:
Gentselev, A. N., Baev, S. G.
Publikováno v:
Optoelectronics Instrumentation & Data Processing; Apr2022, Vol. 58 Issue 2, p198-205, 8p
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 11:710-720
A technique for fabricating self-bearing pseudometallic structures, which hold promise for utilization as quasi-optical frequency-selective elements in the terahertz range of the electromagnetic spectrum, is discussed. The technique is based on micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68bc178a42d31be7763e2ccd51625bef
https://doi.org/10.1134/s1027451017040073
https://doi.org/10.1134/s1027451017040073