Zobrazeno 1 - 10
of 1 350
pro vyhledávání: '"A. Geelhaar"'
Autor:
Kang, Jingxuan, Ruiz, Mikel Gómez, Van Dinh, Duc, Campbell, Aidan F, John, Philipp, Auzelle, Thomas, Trampert, Achim, Lähnemann, Jonas, Brandt, Oliver, Geelhaar, Lutz
500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction, secondary ion mass
Externí odkaz:
http://arxiv.org/abs/2410.04206
Autor:
Kang, Jingxuan, Jose, Rose-Mary, Oliva, Miriam, Auzelle, Thomas, Ruiz, Mikel Gómez, Tahraoui, Abbes, Lähnemann, Jonas, Brandt, Oliver, Geelhaar, Lutz
The dewetting of thin Pt films on different surfaces is investigated as a means to provide the patterning for the top-down fabrication of GaN nanowire ensembles. The transformation from a thin film to an ensemble of nanoislands upon annealing proceed
Externí odkaz:
http://arxiv.org/abs/2402.14375
Autor:
John, Philipp, Trampert, Achim, Van Dinh, Duc, Spallek, Domenik, Lähnemann, Jonas, Kaganer, Vladimir, Geelhaar, Lutz, Brandt, Oliver, Auzelle, Thomas
We study the molecular beam epitaxy of rock-salt ScN on the wurtzite GaN($1\bar{1}00$) surface. To this end, ScN is grown on free-standing GaN($1\bar{1}00$) substrates and self-assembled GaN nanowires that exhibit ($1\bar{1}00$) sidewalls. On both su
Externí odkaz:
http://arxiv.org/abs/2402.00702
Publikováno v:
Nano Lett. 2015, 15, 3, 1930
We use line-of-sight quadrupole mass spectrometry to monitor the spontaneous formation of GaN nanowires on Si during molecular beam epitaxy. We find that the temporal evolution of nanowire ensembles is well described by a double logistic function. Th
Externí odkaz:
http://arxiv.org/abs/2402.01757
Autor:
Fernández-Garrido, Sergio, Kong, Xiang, Gotschke, Tobias, Calarco, Raffaella, Geelhaar, Lutz, Trampert, Achim, Brandt, Oliver
Publikováno v:
Nano Lett. 2012, 12, 12, 6119
We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced by defects. For this purpose, we prepare smooth and coherently strained
Externí odkaz:
http://arxiv.org/abs/2402.01755
Autor:
Fernández-Garrido, Sergio, Kaganer, Vladimir M., Sabelfeld, Karl K., Gotschke, Tobias, Grandal, Javier, Calleja, Enrique, Geelhaar, Lutz, Brandt, Oliver
Publikováno v:
Nano Lett. 2013, 13, 7, 3274
We investigate the axial and radial growth of GaN nanowires upon a variation of the Ga flux during molecular beam epitaxial growth. An increase in the Ga flux promotes radial growth without affecting the axial growth rate. In contrast, a decrease in
Externí odkaz:
http://arxiv.org/abs/2402.01756
Autor:
Fernández-Garrido, Sergio, Ramsteiner, Manfred, Gao, Guanhui, Galves, Lauren A., Sharma, Bharat, Corfdir, Pierre, Calabrese, Gabriele, Schiaber, Ziani de Souza, Pfüller, Carsten, Trampert, Achim, Lopes, João Marcelo J., Brandt, Oliver, Geelhaar, Lutz
Publikováno v:
Nano Lett. 2017, 17, 9, 5213
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesize
Externí odkaz:
http://arxiv.org/abs/2401.16874
Autor:
Zettler, Johannes K., Corfdir, Pierre, Hauswald, Christian, Luna, Esperanza, Jahn, Uwe, Flissikowski, Timur, Schmidt, Emanuel, Ronning, Carsten, Trampert, Achim, Geelhaar, Lutz, Grahn, Holger T., Brandt, Oliver, Fernández-Garrido, Sergio
Publikováno v:
Nano Letters 2016, 16, 2, 973
The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor hetero
Externí odkaz:
http://arxiv.org/abs/2401.16868
Autor:
Zettler, J. K., Hauswald, C., Corfdir, P., Musolino, M., Geelhaar, L., Riechert, H., Brandt, O., Fernández-Garrido, S.
Publikováno v:
Cryst. Growth Des. 2015, 15, 8, 4104
In molecular beam epitaxy, the spontaneous formation of GaN nanowires on Si(111) substrates at elevated temperatures is limited by the long incubation time that precedes nanowire nucleation. In this work, we present three unconventional growth approa
Externí odkaz:
http://arxiv.org/abs/2402.00583
Autor:
Schiaber, Ziani de Souza, Calabrese, Gabriele, Kong, Xiang, Trampert, Achim, Jenichen, Bernd, da Silva, José Humberto Dias, Geelhaar, Lutz, Brandt, Oliver, Fernández-Garrido, Sergio
Publikováno v:
Nano Lett. 2017, 17, 63
We present a conceptually novel approach to achieve selective area epitaxy of GaN nanowires. The approach is based on the fact that these nanostructures do not form in plasma-assisted molecular beam epitaxy on structurally and chemically uniform cati
Externí odkaz:
http://arxiv.org/abs/2401.16514