Zobrazeno 1 - 10
of 12 121
pro vyhledávání: '"A. Gali"'
Autor:
A. Haykal, R. Tanos, N. Minotto, A. Durand, F. Fabre, J. Li, J. H. Edgar, V. Ivády, A. Gali, T. Michel, A. Dréau, B. Gil, G. Cassabois, V. Jacques
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-7 (2022)
Recently, coherent control of spin defects in hBN has been realized, enabling future applications in quantum sensing technologies. Here the authors perform a systematic study of isotope-dependent spin coherence properties of the negatively-charged bo
Externí odkaz:
https://doaj.org/article/dd6af389593e41d78dcadfcd0f6a0238
Autor:
Bortnikov, Edward, Azran, Michael, Bornstein, Asa, Dashevsky, Shmuel, Huang, Dennis, Kepten, Omer, Pan, Michael, Sheffi, Gali, Twitto, Moshe, Orzech, Tamar Weiss, Keidar, Idit, Gueta, Guy, Maor, Roey, Dayan, Niv
We present~\emph{KV-Tandem}, a modular architecture for building LSM-based storage engines on top of simple, non-ordered persistent key-value stores (KVSs). KV-Tandem enables advanced functionalities such as range queries and snapshot reads, while ma
Externí odkaz:
http://arxiv.org/abs/2411.11091
Autor:
Liu, W., Li, S., Guo, N. -J., Zeng, X. -D., Xie, L. -K., Liu, J. -Y., Ma, Y. -H., Wu, Y. -Q., Wang, Y. -T., Wang, Z. -A., Ren, J. -M., Ao, C., Xu, J. -S., Tang, J. -S., Gali, A., Li, C. -F., Guo, G. -C.
Spin defects in atomically thin two-dimensional (2D) materials such as hexagonal boron nitride (hBN) attract significant attention for their potential quantum applications. The layered host materials not only facilitate seamless integration with opto
Externí odkaz:
http://arxiv.org/abs/2410.18892
Autor:
Steidl, Timo, Kuna, Pierre, Hesselmeier-Hüttmann, Erik, Liu, Di, Stöhr, Rainer, Knolle, Wolfgang, Ghezellou, Misagh, Ul-Hassan, Jawad, Schober, Maximilian, Bockstedte, Michel, Gali, Adam, Vorobyov, Vadim, Wrachtrup, Jörg
Nanoelectrical and photonic integration of quantum optical components is crucial for scalable solid-state quantum technologies. Silicon carbide stands out as a material with mature quantum defects and a wide variety of applications in semiconductor i
Externí odkaz:
http://arxiv.org/abs/2410.09021
The neutral divacancy and the negatively charged nitrogen-vacancy defects in 4H-silicon carbide (SiC) are two of the most prominent candidates for functioning as room-temperature quantum bits (qubits) with telecommunication-wavelength emission. Nonet
Externí odkaz:
http://arxiv.org/abs/2409.10233
Autor:
Salomon, Andreas, Aberl, Johannes, Navarrete, Enrique Prado, Karaman, Merve, Gali, Ádám, Fromherz, Thomas, Brehm, Moritz
Silicon color centers (SiCCs) have recently emerged as potential building blocks for light emitters in Si photonics, quantum emitters with spin storage capabilities, and Si-based quantum repeaters. We have recently developed a non-invasive method to
Externí odkaz:
http://arxiv.org/abs/2408.13660
Optically addressable defect qubits in wide band gap materials are favorable candidates for room temperature quantum information processing. The two-dimensional (2D) hexagonal boron nitride (hBN) is an attractive solid state platform with a great pot
Externí odkaz:
http://arxiv.org/abs/2408.13515
In recent years, the negatively charged group-IV--vacancy defects in diamond, labeled as G4V($-$) or G4V centers, have received a great attention in quantum information processing. In this study, we investigate the magneto-optical properties of the G
Externí odkaz:
http://arxiv.org/abs/2408.10407
Autor:
Bulancea-Lindvall, Oscar, Davidsson, Joel, Ivanov, Ivan G., Gali, Adam, Ivády, Viktor, Armiento, Rickard, Abrikosov, Igor A.
Publikováno v:
Phys. Rev. Applied 22, 034056 (2024)
Defects in semiconductors have in recent years been revealed to have interesting properties in the venture towards quantum technologies. In this regard, silicon carbide has shown great promise as a host for quantum defects. In particular, the ultra-b
Externí odkaz:
http://arxiv.org/abs/2408.06823
We investigate the effect of a waveguide on an emitter spontaneous emission in its vicinity. The impact of various possible orientations of an emitter with respect to the waveguide surface is studied through simulations and compared with experimental
Externí odkaz:
http://arxiv.org/abs/2407.06592