Výsledky vyhledávání - "A. G. Vainilovich"

Akademický článek

AMMONIA MOLECULAR BEAM EPITAXY OF AlGaN HETEROSTRUCTURES ON SAPPHIRE SUBSTRATES

Autor: M. V. Rzheutski, Ja. A. Solovjov, A. G. Vainilovich, I. Ya. Svitsiankou, A. N. Pyatlitski, D. V. Zhyhulin, E. V. Lutsenko

Publikováno v: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 7 (125), Pp 144-151 (2019)

In order to develop a technology for the growth of Al(Ga)N-based heterostructures, the effect of different molecular beam epitaxy growth conditions on the properties of AlN and AlGaN layers was studied. The optimal conditions for the growth of AlN bu

Externí odkaz: https://doaj.org/article/72fe1d83a59943ab97e0cb4f9685c8b3

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AMMONIA MOLECULAR BEAM EPITAXY OF AlGaN HETEROSTRUCTURES ON SAPPHIRE SUBSTRATES

Autor: Ja. А. Solovjov, D. V. Zhyhulin, A. N. Pyatlitski, E. V. Lutsenko, A. G. Vainilovich, M. V. Rzheutski, I. E. Svitsiankou

Publikováno v: Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 7 (125), Pp 144-151 (2019)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eaa31035e3f0d09a640e1051d08dab9c
https://doklady.bsuir.by/jour/article/view/2238

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Stimulated emission of AlGaN layers grown on sapphire substrates using ammonia molecular beam epitaxy

Autor: A. N. Alekseev, I. E. Svitsiankou, G. P. Yablonskii, A. V. Nagorny, A. N. Pyatlitski, A. G. Vainilovich, D. V. Zhigulin, V. A. Shulenkova, V. A. Solodukha, Ya. A. Solov’ev, S. I. Petrov, Evgenii V. Lutsenko, M. V. Rzheutski

Publikováno v: Quantum Electronics. 49:540-544

By optimising the growth temperature of the AlGaN layers and using high-temperature AlN buffer layers, high-quality Al x Ga1 – x N layers (x = 0.15, 0.21, 0.26, and 0.3) were obtained, in which stimulated emission in the UV spectral range 330 – 2

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::75fd93e4f0ff03b45e7633dd46bd0851
https://doi.org/10.1070/qel17031

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MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3

Autor: E. V. Muravitskaya, S. I. Petrov, E. V. Lutsenko, A. N. Alexeev, V. A. Shulenkova, M. V. Rzheutski, I. E. Svitsiankou, A. G. Vainilovich, G. P. Yablonskii

Publikováno v: Semiconductors. 52:2107-2110

The effect of molecular-beam epitaxy (MBE) growth conditions on properties of AlN epitaxial layers was investigated resulting in determination of optimal substrate temperature and ammonia flow. Optimal substrate temperature for growth of GaN and AlGa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e53310e33f46c084f484ff455135a86e
https://doi.org/10.1134/s1063782618160170

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Internal laser characteristics of optically pumped yellow-orange lasers

Autor: Irina V. Sedova, Maher Aljohani, N. P. Tarasuk, Stefan Ivanov, Ahmed Y. Alyamani, Sergey V. Sorokin, Viacheslav N. Pavlovskii, G. P. Yablonskii, Evgenii V. Lutsenko, Abdulaziz Aljariwi, A. G. Vainilovich, S. V. Gronin

Publikováno v: physica status solidi (b). 253:1490-1493

Internal laser characteristics of two heterostructures with an active region based on CdSe quantum dots (QDs) embedded in a complex (2–3) nm ZnCdSe/ZnSe quantum well (QW) were determined by measuring the differential laser efficiency and the laser

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4ee5f0f293c7801cdc4fbe137413ca32
https://doi.org/10.1002/pssb.201600125

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Influence of the number of electronically coupled CdSe/ZnSe QD planes on characteristics of optically pumped green lasers

Autor: Irina V. Sedova, A. G. Vainilovich, M. Aljoheni, E. V. Lutsenko, Ahmed Y. Alyamani, A. Aljerwi, S. V. Gronin, G. P. Yablonskii, S. V. Sorokin, Stefan Ivanov

Publikováno v: physica status solidi c. 13:522-525

Structural properties and laser characteristics of true green (λ=530-550 nm) ZnSe-based optically pumped laser heterostructures with several (up to three) CdSe/ZnSe quantum dot (QD) planes in the active region were studied in details. Optimization o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::073f7ae85961ab473062232e8b71c6a8
https://doi.org/10.1002/pssc.201510289

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Microchip laser converter based on InGaN laser diode and (Zn)CdSe quantum dot heterostructure

Autor: Evgenii V. Lutsenko, Irina V. Sedova, Maher Aljohani, Stefan Ivanov, Abdulaziz Aljariwi, Sergey V. Sorokin, Viacheslav N. Pavlovskii, A. G. Vainilovich, Ahmed Y. Alyamani, G. P. Yablonskii, S. V. Gronin

Publikováno v: physica status solidi (b). 253:1498-1502

A high-efficiency microchip violet–green laser converter based on a molecular-beam epitaxy grown green-emitting (Zn)CdSe quantum dot (QD) II–VI laser heterostructure, optically pumped by emission of a cheap violet InGaN laser diode (LD) was demon

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::03b92196731ec80651475cb7c077fe4b
https://doi.org/10.1002/pssb.201600070

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Ultraviolet Stimulated Emission in AlGaN Layers Grown on Sapphire Substrates Using Ammonia and Plasma‐Assisted Molecular Beam Epitaxy

Autor: V. N. Jmerik, A. N. Alexeev, Aliaksei V. Nahorny, I. E. Svitsiankou, S. I. Petrov, Evgenii V. Lutsenko, M. V. Rzheutski, A. G. Vainilovich, Vitaly Z. Zubialevich, Dmitrii V. Nechaev, G. P. Yablonskii

Publikováno v: physica status solidi (a). 217:1900927

Ammonia and plasma‐assisted (PA) molecular beam epitaxy modes are used to grow AlN and AlGaN epitaxial layers on sapphire substrates. It is determined that the increase of thickness of AlN buffer layer grown by ammonia‐MBE from 0.32 μm to 1.25 �

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::483b183bf492749edc89f24edd3f0596
https://doi.org/10.1002/pssa.201900927

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Molecular-beam epitaxy of heterostructures of wide-gap II–VI compounds for low-threshold lasers with optical and electron pumping

Autor: S. S. Ruvimov, P. S. Kop’ev, G. P. Yablonskii, M. V. Rakhlin, M. V. Baidakova, Sergei Ivanov, I. V. Sedova, Evgenii V. Lutsenko, S. V. Sorokin, E. V. Zhdanova, M. M. Zverev, Sergei Gronin, N. A. Gamov, A. G. Vainilovich

Publikováno v: Semiconductors. 49:331-336

The paper presents basic approaches in designing and growing by molecular beam epitaxy of (Zn,Mg)(S,Se)-based laser heterostructures with multiple CdSe quantum dot (QD) sheets or ZnCdSe quantum wells (QW). The method of calculation of compensating sh

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f7ec2644b36931eb17b23aadca3b95fa
https://doi.org/10.1134/s1063782615030215

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AlGaN/GaN high electron mobility transistor heterostructures grown by ammonia and combined plasma-assisted ammonia molecular beam epitaxy

Autor: Varvara A. Shulenkova, Vitaly Z. Zubialevich, Evgenii V. Lutsenko, M. V. Rzheutski, G. P. Yablonskii, A. G. Vainilovich, S. I. Petrov, I. E. Svitsiankou, A. N. Alexeev, Ahmed Y. Alyamani

Publikováno v: Japanese Journal of Applied Physics. 58:SC1010

The structural properties and surface morphology of AlN epitaxial layers grown by ammonia (NH3) and plasma-assisted (PA) molecular beam epitaxy (MBE) at different growth conditions on (0001) sapphire were investigated. The lowest RMS roughness of ~0.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ceb48f01971fb5fdc290b914928f0206
https://doi.org/10.7567/1347-4065/ab06b4

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