Zobrazeno 1 - 10
of 870
pro vyhledávání: '"A. G. U. Perera"'
Autor:
Landewatte Ajith de Silva, Kirthi Tennakone, Sunil Dehipawala, A. G. U. Perera, K.D.M.S.P.K. Kumarasinghe, G.R.R.A. Kumara
Publikováno v:
Chemistry Letters. 49:1470-1472
Though dye-sensitized solar cells (DSCs) made from less photo-catalytically active tin and zinc oxides are inefficient, composite tin-zinc oxide films yield efficiencies comparable to those fabrica...
Publikováno v:
MRS Advances. 4:661-666
One-dimensional hybrid Distributed Bragg Reflector (DBR) is constructed using Tris (8-hydroxy) quinoline aluminum (Alq3) molecules and Titanium dioxide (TiO2) nanoparticles via spin coating process. Light emission from thin films of low molecular wei
Autor:
K. Senevirathna, N. U. Jayawardana, U. G. Chandrika, R. D. Jayasinghe, A. G. U. Perera, B. Seneviratne
Publikováno v:
Journal of Diagnostic Pathology. 16:11
Autor:
Ryan Landry, Victoria Martin, A. G. U. Perera, P. K. D. D. P. Pitigala, L. Ajith DeSilva, Javier E. Hasbun, T M W J Bandara, Anne Gaquere-Parker
Publikováno v:
Journal of Materials Science: Materials in Electronics. 28:7724-7729
Two major drawbacks in dye-sensitized solar cells (DSSC) are the narrow spectral response and the short-term stability. Research on development of artificial dyes for a broad frequency response is a major field of research today. The work presented h
Publikováno v:
Mater Today Proc
Performance of Dye-sensitized devices depends on the photon absorption and carrier injection properties of the sensitizer (dye). The orientation of the dye molecule affects the photon absorption cross-section, injection efficiency and carrier transpo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f0c208d8f9bf1a55c538dc56e2e20de
https://europepmc.org/articles/PMC7949483/
https://europepmc.org/articles/PMC7949483/
The III-V semiconductor heterostructure-based photodetectors have been studied extensively for infrared detection, from near-infrared (NIR) to far-infrared (FIR) region. Due to the mature material system, GaAs/AlxGa1-xAs heterostructures are attracti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::293ba4f08f350d4af35ba35b8219da33
Autor:
P. K. D. D. P. Pitigala, Yan-Feng Lao, A. G. U. Perera, Seyoum Wolde, Suraj P. Khanna, Edmund H. Linfield, Lianhe Li
Publikováno v:
Infrared Physics & Technology. 78:99-104
We have measured and analyzed, at different temperatures and bias voltages, the dark noise spectra of GaAs/AlGaAs heterojunction infrared photodetectors, where a highly doped GaAs emitter is sandwiched between two AlGaAs barriers. The noise and gain
Autor:
A. G. U. Perera
Publikováno v:
Progress in Quantum Electronics. 48:1-56
The interest in Infrared and Ultraviolet detectors has increased immensely due to the emergence of important applications over a wide range of activities. Detectors based on free carrier absorption known as Hetero-junction Interfacial Workfunction In
Publikováno v:
Journal of Electronic Materials. 45:4626-4630
The band offset at the interface of a heterojunction is one of the most important parameters determining the characteristics of devices constructed from heterojunction. Accurate knowledge of band offsets and their temperature dependence will allow on
Autor:
Y. F. Lao, A. G. U. Perera
Publikováno v:
Advances in OptoElectronics, Vol 2016 (2016)
Internal photoemission (IP) correlates with processes in which carriers are photoexcited and transferred from one material to another. This characteristic allows characterizing the properties of the heterostructure, for example, the band parameters o