Adsorption and Diffusion of Atoms of Groups 1, 2 and 13 Elements on Antimony Telluride Surface

Autor: A. G. Ryabishchenkova, V. M. Kuznetsov

Publikováno v: Russian Physics Journal. 62:512-518

The paper presents ab initio calculations of the adsorption and diffusion of atoms of groups 1, 2 and 13 elements on the (0001) surface of antimony telluride (Sb2Te3) topological insulator. It is shown that most of the investigated adatoms possess mi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d25bc19fb90daca3ec633076bda6b431
https://doi.org/10.1007/s11182-019-01739-3

Low-coverage surface diffusion in complex periodic energy landscapes. II. Analytical solution for systems with asymmetric hops

Autor: Mikhail M. Otrokov, Anastasia G. Ryabishchenkova, Evgueni V. Chulkov, Miguel A. Gosálvez, Pedro M. Echenique, Andrés Ayuela, Néstor Ferrando

Publikováno v: Digital.CSIC: Repositorio Institucional del CSIC
Consejo Superior de Investigaciones Científicas (CSIC)
Physical Review B. 2016. Vol. 93, № 20. P. 205416-1-205416-21
Digital.CSIC. Repositorio Institucional del CSIC
instname

This is part II in a series of two papers that introduce a general expression for the tracer diffusivity in complex, periodic energy landscapes with M distinct hop rates in one-, two-, and three-dimensional diluted systems (low coverage, single-trace

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3223ea177ad5b8441315627b0231ee4a
http://hdl.handle.net/10261/246161

Ab initio study of the adsorption, diffusion, and intercalation of alkali metal atoms on the (0001) surface of the topological insulator Bi2Se3

Autor: Mikhail M. Otrokov, Eugene V. Chulkov, A. G. Ryabishchenkova, V. M. Kuznetsov

Publikováno v: Journal of experimental and theoretical physics. 2015. Vol. 121, № 3. P. 465-476
Digital.CSIC. Repositorio Institucional del CSIC
instname

Ab initio study of the adsorption, diffusion, and intercalation of alkali metal adatoms on the (0001) step surface of the topological insulator Bi2Se3 has been performed for the case of low coverage. The calculations of the activation energies of dif

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2399f18f891f820316aa3007e71a90e8
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000577945

Tuning the Dirac point position in Bi(2)Se(3)(0001) via surface carbon doping

Autor: Sumalay, Roy, H L, Meyerheim, A, Ernst, K, Mohseni, C, Tusche, M G, Vergniory, T V, Menshchikova, M M, Otrokov, A G, Ryabishchenkova, Z S, Aliev, M B, Babanly, K A, Kokh, O E, Tereshchenko, E V, Chulkov, J, Schneider, J, Kirschner

Publikováno v: Physical review letters. 113(11)

Angular resolved photoemission spectroscopy in combination with ab initio calculations show that trace amounts of carbon doping of the Bi_{2}Se_{3} surface allows the controlled shift of the Dirac point within the bulk band gap. In contrast to expect

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::119414b477a560b4199c7969cd775751
https://pubmed.ncbi.nlm.nih.gov/25259997