Zobrazeno 1 - 10
of 20
pro vyhledávání: '"A. G. Rokakh"'
Publikováno v:
Technical Physics Letters.
Publikováno v:
Technical Physics Letters. 45:370-373
The main laws of electron transport in layers of lead sulfide (PbS) nanoparticles deposited from aqueous ethanol suspensions were determined by analysis of their current–voltage characteristics. Optical spectra measured at wavelengths in the region
Publikováno v:
Semiconductors. 52:986-992
The transverse and longitudinal photoconductivity, photoluminescence, and cathodoluminescence of sublimated (CdS)0.9–(PbS)0.1 films at room temperature and upon cooling are studied. The role of inclusions of the narrow-gap phase in the processes is
Publikováno v:
Semiconductors. 52:755-759
The structural and electrical properties of PbS nanoparticles (40–70 nm), produced by a chemical reaction of sodium hydroxide with lead nitrate and electrophoretically deposited onto a conductive substrate, are investigated. The composition and str
Publikováno v:
Technical Physics Letters. 44:309-312
The spectral dependences of transmission, absorption, and reflection in CdS−PbS semiconductor layers, which are promising for the development of photodetectors and emitters in the region of an atmospheric- transparency window, were studied. It has
Publikováno v:
Technical Physics Letters. 44:362-365
Qualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15–25 μm were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grad
Publikováno v:
Nanotechnologies in Russia. 5:390-398
The possibility of optical control over the secondary ion yield from a photoconducting target is demonstrated; using it, one can both increase and decrease this yield. The sign of the secondary ion photoeffect (SIP) is determined by the energy positi
Autor:
M. D. Matasov, A. G. Rokakh
Publikováno v:
Semiconductors. 44:98-105
This study of the photoconductivity of semiconductors, in particular, cadmium chalcogenides as materials for targets of vacuum image converters followed the path of overcoming paradoxes. The concepts developed by the classics of photoelectricity also
Publikováno v:
Technical Physics. 52:1483-1489
Secondary-ion mass spectrometry of photoconducting CdS-PbS films has revealed a change in the yield of positive secondary ions upon illumination. In the course of bombardment by positive oxygen ions, illu- mination of the samples by visible light dec
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 226:595-600
The influence of positively charged ion bombardment and white light illumination on polycrystalline high-resistance photosensitive CdS–PbS semiconductor was investigated by secondary-ion mass spectrometry method. The illumination during ion sputter