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Autor:
A. G. Phedorov, I. O. Rudyi, I. S. Virt, I. V. Kurilo, T. P. Shkumbatyuk, V. V. Tetyorkin, L. F. Linnik, T. Ye. Lopatinskyi
Publikováno v:
Semiconductors. 44:544-549
Bi2Te3 and Sb2Te3 films were obtained by pulsed laser ablation. The films were deposited in vacuum (1 × 10−5 Torr) on single crystal substrates of Al2O3 (0001), BaF2 (111), and fresh cleavages of KCl or NaCl (001) heated to 453–523 K. The films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ae444f49ab1084107d73a0c16f76443
https://doi.org/10.1134/s1063782610040238
https://doi.org/10.1134/s1063782610040238
