Zobrazeno 1 - 10
of 26
pro vyhledávání: '"A. G. Nassiopoulos"'
Autor:
Grigoris Kaltsas, A. G. Nassiopoulos
Publikováno v:
Microelectronic Engineering. 35:397-400
A bulk silicon micromachining technique using porous silicon as a sacrificial layer is developed. The proposed process is fully C-MOS compatible and it was successfully used to fabricate deep cavities into silicon with very smooth bottom surfaces and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee1ddfbfc19d6016255c248d7b488aa4
https://doi.org/10.1016/s0167-9317(96)00209-2
https://doi.org/10.1016/s0167-9317(96)00209-2
Autor:
Stella Kennou, Dimitrios Papadimitriou, A. G. Nassiopoulos, S. Grigoropoulos, Anastasios Travlos, Spyridon Ladas
Publikováno v:
Applied Surface Science. 102:377-380
Silicon nanopillars were produced by using deep-UV lithography, fluorine based highly anisotropic silicon etching and further thinning by high temperature thermal or chemical oxidation and oxide removal. The obtained structures were fully characteriz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::908cef1c2d459722efcebcc4123c1b44
https://doi.org/10.1016/0169-4332(96)00081-5
https://doi.org/10.1016/0169-4332(96)00081-5
Publikováno v:
physica status solidi (b). 190:91-95
Sub-ten nanometer diameter silicon pillars and silicon walls of the same thickness are fabricated by using conventional optical lithography based on deep-UV exposure and reactive ion etching using fluorine only containing gases. The produced structur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be538e95a21935bf6c2f68123601ad22
https://doi.org/10.1002/pssb.2221900114
https://doi.org/10.1002/pssb.2221900114
Publikováno v:
Microelectronic Engineering. 27:449-452
Silicon reactive ion etching using a mixture of SF"6 and CHF"3 at room temperature was investigated. The etching characteristics as a function of gas composition, rf power, pressure and masking material as well as electrode material were studied. Hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3270ec6a950246c84848bfa0fb73c42a
https://doi.org/10.1016/0167-9317(94)00143-i
https://doi.org/10.1016/0167-9317(94)00143-i
Autor:
A. G. Nassiopoulos, Evangelos Gogolides, K. Yannakopoulou, E. Tsois, Michael Hatzakis, A. Traverse
Publikováno v:
Scopus-Elsevier
A liquid-phase (wet) silylation process has been developed using the commercial photoresist AZ 5214 ™ , and I-line lithography. The resist is dry developed with O 2 reactive ion etching (RIE); a subsequent CHF 3 /SF 6 RIE, transfers on oxide lines
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce8163ff090f808a8566ec4b9152a85a
https://doi.org/10.1016/0167-9317(94)90005-1
https://doi.org/10.1016/0167-9317(94)90005-1
Publikováno v:
Journal of Applied Physics. 75:4533-4538
Interfaces of titanium disilicide films formed on silicon by alternate titanium‐silicon electron gun deposition and annealing were characterized by current‐voltage measurements on specially prepared Schottky diodes at both room and low temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daac1cb5f4b52f4eb4ba1a2d47bf1277
https://doi.org/10.1063/1.355946
https://doi.org/10.1063/1.355946
Publikováno v:
Journal of Applied Physics. 72:4660-4668
Titanium disilicide is formed by thermal annealing of amorphous Si/Ti multilayers, deposited on monocrystalline silicon by alternate electron‐gun evaporation of Si and Ti. The bilayer periodicity was equal to 4. The bilayer Si/Ti thickness ratio wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c06b1e3d958192d3b3f7e0b8fc475792
https://doi.org/10.1063/1.352122
https://doi.org/10.1063/1.352122
Publikováno v:
Surface and Interface Analysis. 19:419-422
The point-to-point resolution of Auger electron spectroscopy is compared to that of x-ray microanalysis of thin unsupported films and of thin films on a bulk material. Monte-Carlo calculations are used in this respect. The incident beam is a Gaussian
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f260d9420009cde9207eaa513ddc4758
https://doi.org/10.1002/sia.740190178
https://doi.org/10.1002/sia.740190178
Publikováno v:
Monthly Notices of the Royal Astronomical Society. 255:1-6
We present time-resolved International Ultraviolet Explorer observations of the low-mass X-ray binary AC211/4U2127+11 in the globular cluster M15 (NGC 7078). The spectra show He II 1640-A emission, the flux of which is modulated on the 8.5-hr orbital
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af33143974b32ff94097089b51eb2e76
https://doi.org/10.1093/mnras/255.1.1
https://doi.org/10.1093/mnras/255.1.1
Publikováno v:
Journal of Applied Physics. 68:1896-1901
The current‐voltage characteristics of p‐channel MOSFETs (metal‐oxide‐semiconductor field‐effect transistors) in the temperature range 4.2‐50 K have been investigated in detail. A peak is observed at the beginning of the drain‐current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::256586a9040aec9108838310c52413f0
https://doi.org/10.1063/1.346579
https://doi.org/10.1063/1.346579