Zobrazeno 1 - 10
of 27
pro vyhledávání: '"A. G. Nassibian"'
Publikováno v:
Physica Status Solidi (a). 125:255-262
A detailed analysis of electron beam and rapid optical furnace annealing of AuGe/Ni ohmic contacts is reported. Although the lowest contact resistance values obtained by both techniques are similar, surface topography is always better for E beam anne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beb840a2ef307dcf0ee8f6611cd06253
https://doi.org/10.1002/pssa.2211250121
https://doi.org/10.1002/pssa.2211250121
Publikováno v:
Proceedings of the 1989 IEEE Particle Accelerator Conference, . 'Accelerator Science and Technology.
Heavy beam loading is encountered in the main RF system of the CERN Proton Synchrotron (PS). This consists of 11 ferrite loaded cavities, each one capable of developing 20 kVp between 2.6 and 10 MHz. Harmonic 20 is normally used for acceleration, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::331a33fc98628bef9046b0ec1aced8b2
https://doi.org/10.1109/pac.1989.73037
https://doi.org/10.1109/pac.1989.73037
Autor:
A G Nassibian, M E Sproul
Publikováno v:
Journal of Physics D: Applied Physics. 8:1507-1512
The temperature dependence of the turn-on voltage of gold-doped MOSFETS made on high-resistivity silicon of both (110) and (111) orientations has been investigated. It has been shown that (110)-oriented silicon wafers yield MOS devices having lower f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f84a3acedb6028b694338c305117195
https://doi.org/10.1088/0022-3727/8/13/012
https://doi.org/10.1088/0022-3727/8/13/012
Publikováno v:
Journal of Applied Physics. 50:5865-5869
The generation lifetime, capture cross section, and thermal emission rates for the gold acceptor level in bulk silicon have been studied using MOS techniques. The experimental methods used were the pulsed high‐frequency capacitance‐time and noneq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afbd1726e1483a04fb2edf09eb4c7e8c
https://doi.org/10.1063/1.326735
https://doi.org/10.1063/1.326735
Autor:
G Nassibian, F. Sacherer
Publikováno v:
Nuclear Instruments and Methods. 159:21-27
Charged particle beams in circular accelerators often become unstable and execute coherent transverse oscillations that grow in amplitude. These are driven by deflecting fields set up by currents induced in the vacuum chamber walls or other equipment
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9ebdaabe0ff2d584717336014a2379e
https://doi.org/10.1016/0029-554x(79)90323-9
https://doi.org/10.1016/0029-554x(79)90323-9
Publikováno v:
International Journal of Electronics. 49:437-446
Experimental results and a description of operating mechanisms are presented for a new, easily integrated M ISS device using MOS-type gating. The device is a lateral version of the MISS structure with switching voltage control obtained via channel mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9873c02b95c1942b2da31153868ed388
https://doi.org/10.1080/00207218008901203
https://doi.org/10.1080/00207218008901203
Autor:
A. G. Nassibian, B. Golja
Publikováno v:
Journal of Applied Physics. 53:6168-6173
Ar‐, O‐, and Cl‐ion implant‐damage gettering of gold from silicon has been examined using metal oxide silicon (MOS) techniques. Silicon wafers were intentionally contaminated with gold and then the ion implantations were performed on the back
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33fe8a7c9e5e8671eccdc95be0e65943
https://doi.org/10.1063/1.331528
https://doi.org/10.1063/1.331528
Publikováno v:
Journal of Applied Physics. 60:3100-3104
AuGe‐Ni is widely used for the fabrication of ohmic contacts to n‐GaAs. The alloying behavior of evaporated AuGe‐Ni alloyed by furnace and scanning electron beam (SEB) is characterized by Rutherford backscattering with 2‐MeV 4He+ ions. The re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::309ebca19750b4290650b06d01312e9c
https://doi.org/10.1063/1.337767
https://doi.org/10.1063/1.337767
Publikováno v:
Journal of Applied Physics. 47:992-996
Gettering of undesirable generation impurities by O and Ar implant damage layer has been investigated by transient response of MOS capacitors. One‐half of each Si wafer was masked against the implanting ion beam and comparison was made between the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb9b0e1abcff911ab4834683f98041cd
https://doi.org/10.1063/1.322692
https://doi.org/10.1063/1.322692
Publikováno v:
International Journal of Electronics. 66:213-225
Detailed analysis of electron beam annealed Ge-WSi-Au and Ge-Ni-WSi-Au ohmic contacts is reported. Lower contact resistance values with better reproducibility and much lower standard deviation are achieved with Ni doped TLM devices. Ar+ ion X-ray pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::957630b331390ef48ebdeb75cb4181ab
https://doi.org/10.1080/00207218908925378
https://doi.org/10.1080/00207218908925378