Zobrazeno 1 - 10
of 17
pro vyhledávání: '"A. G. Kyazym-zade"'
Autor:
R. M. Mamedov, A. G. Kyazym-zade, V. M. Salmanov, A. A. Salmanova, A. G. Guseinov, F. M. Akhmedova, Z. A. Agamaliev
Publikováno v:
Technical Physics. 64:555-558
Conductivity inversion in thin n-InSe films under intense pulsed laser irradiation was obser. A p–n structure based on indium selenide formed between irradiated and nonirradiated regions of a thin-film sample. It was confirmed by EDAX analysis that
Autor:
A. G. Guseinov, A. A. Salmanova, V. M. Salmanov, R. M. Mamedov, A. G. Kyazym-zade, F. Sh. Akhmedova
Publikováno v:
Russian Physics Journal. 60:1680-1683
The successive ionic layer adsorption and reaction (SILAR) method is used to prepare InSe thin films and InSe nanoparticles. Shapes and sizes of the obtained nanoparticles are investigated using a scanning electron microscope and an atomic force micr
Publikováno v:
Semiconductors. 51:454-457
Stable colloidal solutions of ZnCdS nanoparticles (3–6 nm in diameter) in polyvinyl alcohol, polyethylene glycol, and H2O are produced. The size of the synthesized nanoparticles is independent of the relation between precursors. It is shown that st
Autor:
A. G. Kyazym-zade, L. G. Gasanova, V. M. Salmanov, A. A. Salmanova, A. Z. Mahammadov, A. G. Guseinov, R. M. Mamedov
Publikováno v:
Optics and Spectroscopy. 121:897-900
Luminescence and photoconductivity of layered Cu3In5S9 crystals at high levels of optical excitation are studied experimentally. A pulsed nanosecond Nd:YAG laser with built-in second and third harmonic generators to generate 1064-, 532-, and 355-nm r
Autor:
A. M. Guseinov, R. M. Mamedov, V. M. Salmanov, A. Kh. Dincher, M. Karabulur, A. G. Kyazym-zade, M. A. Dzhafarov
Publikováno v:
Nanotechnologies in Russia. 10:794-801
Experimental results devoted to obtaining nanoparticles based on GaSe crystals; the analysis of the structure; and studies of their electrical, optical, and photoluminescent characteristics are presented. Nanoparticles and thin films GaSe of on a gla
Autor:
R. M. Mamedov, A. A. Salmanova, A. G. Kyazym-zade, A. G. Guseinov, A. A. Dzhavadzade, V. M. Salmanov
Publikováno v:
Optics and Spectroscopy. 117:419-422
Light absorption in the region of exciton resonance of GaSe crystal is studied experimentally at high levels of optical excitation. A picosecond YAG:Nd3+ laser emitting 30-ps light pulses and a dye laser with a pulse width of ∼3 ns tunable within t
Publikováno v:
Optics and Spectroscopy. 116:595-598
The nonlinear absorption of light and its temporal evolution in the vicinity of exciton resonance in layered GaSe and InSe crystals under high optical excitation have been experimentally investigated. The decisive factor for the observed temporal dep
Publikováno v:
Semiconductors. 44:289-292
The photoconductivity and luminescence of GaSe layered crystals at high levels of optical excitation are studied experimentally. The specific features observed in the photoconductivity and photoluminescence spectra are controlled by the nonlinear opt
Publikováno v:
Semiconductors. 42:518-521
The effects of switching and electroluminescence as well as the interrelation between these effects in single crystals of GaS x Se1−x alloys are detected and studied. It is established that the threshold voltage for switching depends on temperature
Publikováno v:
Inorganic Materials. 44:357-360
The photoconductivity of GaSe crystals has been studied under high-density optical excitation. The results are interpreted in terms of the charge transport anisotropy and nonlinear optical absorption in the crystals.