Zobrazeno 1 - 10
of 349
pro vyhledávání: '"A. G. Korotaev"'
Autor:
Vladimir V. Dirko, Kirill A. Lozovoy, Andrey P. Kokhanenko, Olzhas I. Kukenov, Alexander G. Korotaev, Alexander V. Voitsekhovskii
Publikováno v:
Nanomaterials, Vol 13, Iss 2, p 231 (2023)
This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7
Externí odkaz:
https://doaj.org/article/1939b59bf47647b096da258831bbb52a
Publikováno v:
Russian Physics Journal. 65:1538-1554
Neutronics Models for Integrated Testing of Transport NPP on Land-Based Prototype Testing Facilities
Autor:
V. G. Artemov, L. M. Artemova, D. Yu. Bessonov, R. E. Zinatullin, A. S. Ivanov, A. S. Karpov, V. G. Korotaev, A. N. Kuznetsov, A. V. Piskarev
Publikováno v:
Atomic Energy. 132:75-81
Publikováno v:
Russian Physics Journal.
Autor:
Rafal Jakiela, S. A. Dvoretsky, M. V. Yakushev, A. V. Voitsekhovskii, A. G. Korotaev, K. D. Mynbaev, Z. Swiatek, N. N. Mikhailov, V. S. Varavin, I. I. Izhnin, O. I. Fitsych
Publikováno v:
Journal of electronic materials. 2021. Vol. 50, № 6. P. 3714-3721
Accumulation of arsenic implantation-induced donor defects in heteroepitaxial Hg1−xCdxTe structures with the composition of the active layer xa = 0.30 was studied with the use of the Hall-effect measurements and mobility spectrum analysis. The stud
Autor:
A. V. Voitsekhovskii, H. V. Savytskyy, D. V. Marin, I. I. Izhnin, O. I. Fitsych, M. V. Yakushev, V. S. Varavin, Jerzy Morgiel, A. G. Korotaev, K. D. Mynbaev, O. Yu. Bonchyk, Z. Swiatek
Publikováno v:
Applied nanoscience. 2022. Vol. 12, № 3. P. 395-401
Bright–field and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic ions with 190 keV energy and 1014 cm–2 fluence in n and p-type Hg0.78Cd0.22Te films grown
Publikováno v:
Journal of applied physics. 2022. Vol. 132, № 15. 155702-1-155702-16
A detailed consideration of the discrete mobility-spectrum analysis (DMSA) method and its application to transport studies in HgCdTe is given. First, a brief review of the methods of the analysis of field dependences of the Hall coefficient and condu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::77d0eefc46c8fc9d5df8adb74ee4e820
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000996468
https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000996468
Autor:
A. G. Korotaev, Kurban Kurbanov, V. G. Remesnik, K. D. Mynbaev, Z. Świątek, S. A. Dvoretskii, A. V. Voitsekhovskii, M. V. Yakushev, Jerzy Morgiel, Nikolay N. Mikhailov, V. S. Varavin, H. V. Savytskyy, I. I. Izhnin, O. I. Fitsych, O. Yu. Bonchyk
Publikováno v:
Russian physics journal. 2020. Vol. 63, № 2. P. 290-295
By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam epitaxy, and comparing the obtained data with the results of studies performed by secondary ion mass spectroscopy and transmission electron microsco
Autor:
M. V. Yakushev, Z. Swiatek, O. Yu. Bonchyk, H. V. Savytskyy, A. G. Korotaev, K. D. Mynbaev, A. V. Voitsekhovskii, N. N. Mikhailov, Jerzy Morgiel, Ihor I. Syvorotka, D. V. Marin, Rafal Jakiela, V. S. Varavin, I. I. Izhnin, O. I. Fitsych
Publikováno v:
Applied nanoscience. 2020. Vol. 10, № 12. P. 4971-4976
Optical reflectance and bright-field and high-resolution transmission electron microscopy studies of radiation damage induced by implantation of arsenic ions with 190 keV and 350 keV energy and 1014 cm–2 fluence in molecular-beam epitaxy-grown Hg0.
Autor:
S. A. Lukin, M. V. Logunov, V. G. Korotaev, A. B. Melent’ev, K. K. Korchenkin, K. V. Bugrov, A. N. Mashkin, N. S. Samarina
Publikováno v:
Theoretical Foundations of Chemical Engineering. 53:925-932
To modernize the extraction facility of the RT-1 plant, two flow diagrams for plutonium purification have been developed. In the first flow diagram, the Pu(IV)–Np(IV) valence pair is stabilized and both Pu and Np are stripped and, in the second flo