Zobrazeno 1 - 10
of 140
pro vyhledávání: '"A. G. Goryachev"'
Publikováno v:
Modern Electronic Materials, Vol 2, Iss 4, Pp 131-137 (2016)
MOCVD grown AlGaN/GaN heterostructures on sapphire and silicon substrates have been studied. The capacity–voltage characteristic have been measured in the 200 Hz–1 MHz frequency range with a planar position of mercury and second probe on the spec
Externí odkaz:
https://doaj.org/article/3506fef9bf724bfa98f214b73f14ab3c
Informational Model for Calculating Road Surface Life and Repairs and the Rational Financing Thereof
Publikováno v:
2022 Intelligent Technologies and Electronic Devices in Vehicle and Road Transport Complex (TIRVED).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17ebbb1d9baf041357f385957db0543c
https://doi.org/10.1109/tirved56496.2022.9965478
https://doi.org/10.1109/tirved56496.2022.9965478
Publikováno v:
Russian Microelectronics. 46:591-599
AlGaN/GaN heterostructures and AlGaN/GaN/SiC HEMT-transistors’ Schottky barriers (SBs) are studied by the capacitance–voltage (CV) method and the SIMS method in order to determine the causes of the capacitance instability in some cases. It is sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f18631c270da95cc8600628a9b20621
https://doi.org/10.1134/s1063739717080066
https://doi.org/10.1134/s1063739717080066
Autor:
N N Arous, M G Goryachev
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 1159:012033
Comparative design of structures allows at an early stage of project development to assess their behavior and predict service life. Approximate numerical methods, for example, the finite element method, are widely introduced to simulate the operation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21d1a52e9c92fc8528a6452eaf6eef70
https://doi.org/10.1088/1757-899x/1159/1/012033
https://doi.org/10.1088/1757-899x/1159/1/012033
Publikováno v:
Modern Electronic Materials, Vol 2, Iss 4, Pp 131-137 (2016)
MOCVD grown AlGaN/GaN heterostructures on sapphire and silicon substrates have been studied. The capacity–voltage characteristic have been measured in the 200 Hz–1 MHz frequency range with a planar position of mercury and second probe on the spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19b9c10feedefe125c4bd23050c7cb80
http://www.sciencedirect.com/science/article/pii/S2452177916300925
http://www.sciencedirect.com/science/article/pii/S2452177916300925
Publikováno v:
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering. 19:115-123
A complex of studies of the AlGaN/GaN heterostructures and the AlGaN/GaN/SiC HEMT-transistors Schottky barriers has been carried out by the C-V method and the SIMS method in order to determine the causes of the capacitance instability in some cases w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f93e22763c1e7aea9bd17ea3a222c92
https://doi.org/10.17073/1609-3577-2016-2-115-123
https://doi.org/10.17073/1609-3577-2016-2-115-123
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 832:012037
The object of research is the method of calculating the strength of cement concrete airfield pavement. According to the current regulatory documents, the calculation of the strength of the coating is carried out according to the first limit state, ta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb9d3bc8cfad6102d01be0e843bc2fa4
https://doi.org/10.1088/1757-899x/832/1/012037
https://doi.org/10.1088/1757-899x/832/1/012037
Publikováno v:
Russian Microelectronics. 44:537-545
The influence of the silicon epitaxial layer’s peculiarities and the silicon–sapphire interface in the silicon-on-sapphire (SOS) structure on the capacitance parameters of MIS-structures formed on SOS with submicron layers of silicon has been stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::441e73fc1f0dda9ef53060c8cb1f2af4
https://doi.org/10.1134/s106373971508003x
https://doi.org/10.1134/s106373971508003x
Autor:
Yang, Yikai1,2 (AUTHOR), Babkevich, Peter2 (AUTHOR), Gaal, Richard2 (AUTHOR), Živković, Ivica2 (AUTHOR), Rønnow, Henrik M.2 (AUTHOR) henrik.ronnow@epfl.ch
Publikováno v:
Scientific Reports. 10/24/2024, Vol. 14 Issue 1, p1-14. 14p.
Publikováno v:
Journal of Experimental and Theoretical Physics. 91:353-360
A microscopic t-J-I model with competing antiferromagnetic (J) and ferromagnetic (I) exchange interactions is proposed for strongly correlated electrons in RuSr2GdCu2O8. It is assumed that for CuO2 layers and for RuO2 layers. A superconducting soluti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::febc7f27f0fc360a3d9545e931853430
https://doi.org/10.1134/1.1311995
https://doi.org/10.1134/1.1311995