Zobrazeno 1 - 10
of 25
pro vyhledávání: '"A. G. Gorobchuk"'
Publikováno v:
ACTUAL PROBLEMS OF CONTINUUM MECHANICS: EXPERIMENT, THEORY, AND APPLICATIONS.
Publikováno v:
Thermophysics and Aeromechanics. 28:635-647
Publikováno v:
HIGH-ENERGY PROCESSES IN CONDENSED MATTER (HEPCM 2020): Proceedings of the XXVII Conference on High-Energy Processes in Condensed Matter, dedicated to the 90th anniversary of the birth of RI Soloukhin.
Numerical calculations of the flow in a plane supersonic boundary layer of vibrationally excited gas in locally self-similar and original formulations were carried out. Some characteristic conditions of the external flow and heat transfer at the boun
Autor:
A. G. Gorobchuk, Yu. N. Grigoryev
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 9:184-189
The hydrodynamic approach is used to simulate silicon passivation by unsaturated CFx radicals under plasma-chemical etching in CF4/H2. The plasma-chemical kinetics model contains 28 determinative gas-phase reactions with the participation of F, F2, C
Autor:
A. G. Gorobchuk, Yu. N. Grigor’ev
Publikováno v:
Russian Microelectronics. 43:34-41
Numeric simulation is used to study the effect of the high-frequency (HF) discharge structure on the process of plasma-chemical etching of silicon in a mixture of CF4/O2. The calculations are carried out using a mathematical model of a nonisothermal
Autor:
M. V. Ovsyukova, A. G. Gorobchuk, S. A. Egorova, T. A. Obut, E. T. Obut, T. Yu. Dement’eva, T. A. Erdynieva
Publikováno v:
Bulletin of Experimental Biology and Medicine. 157:231-233
Male rats were exposed to single or repeated (19 days) cold treatment (4°C) and non-cold stress (60-min shaking on a laboratory shuttle device). Retabolil had a hypotensive effect, which was accompanied by the prevention of a stress-induced increase
Autor:
Aleksey G. Gorobchuk
Publikováno v:
2015 International Siberian Conference on Control and Communications (SIBCON).
In the frame of hydrodynamical approach a technology of plasma-chemical etching silicon in CF 4 /H 2 plasma was simulated. The model of plasma-chemical kinetics contained 28 gas-phase reactions including the components F, F 2 , CF 2 , CF 3 , CF 4 , C
Publikováno v:
2013 International Siberian Conference on Control and Communications (SIBCON).
The plasma-chemical etching technology in RF discharge was simulated in hydrodynamical approach. The calculations based on the mathematical model of plasma-chemical reactor in which gas flow was described by the convective-diffusion equations of mult
Publikováno v:
2010 IEEE Region 8 International Conference on Computational Technologies in Electrical and Electronics Engineering (SIBIRCON).
The effect of RF discharge structure on silicon etching process in CF 4 /O 2 mixture was studied. The calculations were carried out based on an advanced mathematical model of plasma-chemical reactor with taking into account a peculiarities of RF disc
Autor:
A. G. Gorobchuk, Yu. N. Grigoryev
Publikováno v:
2010 27th International Conference on Microelectronics Proceedings.
The effect of RF discharge structure on silicon etching process in CF 4 /O 2 mixture was studied. The calculations were carried out based on an advanced mathematical model of plasma-chemical reactor with taking into account a peculiarities of RF disc