Zobrazeno 1 - 10
of 41
pro vyhledávání: '"A. G. Golenkov"'
Autor:
S. G. Bunchuk, A. G. Golenkov, M.V. Vuichyk, I. O. Lysiuk, V. P. Reva, F. F. Sizov, A.V. Shevchik-Shekera, S. V. Korinets, M.Yu. Kovbasa, S. E. Dukhnin
Publikováno v:
Semiconductor Physics, Quantum Electronics and Optoelectronics. 24:90-99
Room temperature linear arrays (up to 160 detectors in array) from silicon metal- oxide-semiconductor field-effect transistors (Si-MOSFETs) have been designed for sub- THz (radiation frequency 140 GHz) close to real-time direct detection operation sc
Autor:
J.V. Gumenjuk-Sichevska, V. A. Shvets, A. G. Golenkov, I.O. Lysiuk, S. A. Dvoretsky, D. G. Ikusov, F. F. Sizov, A. L. Aseev, Anton Latyshev, Z. Tsybrii, A.V. Shevchik-Shekera, N. N. Mikhailov, Yu. G. Sidorov, V. S. Varavin, V. G. Remesnik, M. V. Yakushev
Publikováno v:
Opto-Electronics Review. 27:282-290
We present an overview of our technological achievements in the implementation of detector structures based on mercury cadmium telluride (MCT) heterostructures and nanostructures for IR and THz spectral ranges. We use a special MBE design set for the
Publikováno v:
2020 IEEE Ukrainian Microwave Week (UkrMW).
The feasibility of using modern convolutional neural networks solutions in the field of terahertz (THz) imaging was discussed. Characteristics of the 0.14 THz postal scanner for the concealed items detection was described. The methodology for image r
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 21, Iss 1, Pp 83-88 (2018)
We report on the development of lenses for terahertz vision systems from their design up to manufacturing. Fused deposition modeling was used for assisting the 3D printing manufacturing process. HIP (High Impact Polystyrene) used for printing has hig
Autor:
S. V. Korinets, S. V. Sapon, F. F. Sizov, A. M. Torchinsky, V. P. Reva, V. V. Zabudsky, A. G. Golenkov
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 2, Pp 9-14 (2018)
The sensitivity and basic electrical characteristics of the developed direct illumination matrices with charge-coupled devices and electronic multiplication were investigated at room temperatures and low illumination. Photomatrices of 576´288 and 64
Publikováno v:
Sensor Electronics and Microsystem Technologies. 14:38-46
A sub-THz/THz radiation detector device based on Si-MOSFET has been presented. Si-MOSFET source and gate connected to an antenna serves as a detector element. Geometry of the Si-MOSFET antenna, principle of device operation, method of estimating the
Autor:
M. V. Vuichyk, K. V. Svezhentsova, F. F. Sizov, I. O. Lysiuk, K. V. Andreeva, Z. F. Tsybrii, N. V. Dmytruk, M. I. Smolii, V. V. Zabudsky, S. Bunchuk, O. G. Golenkov, M. V. Apatska
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 6, Pp 8-13 (2017)
The authors have developed the topology and technological fabrication route for discrete photodiodes (= 0,5—1,5 mm) for the mid wavelength infrared (MWIR) range, based on the mercury-cadmium-telluride (MCT) epitaxial layers. The paper describes
Autor:
V. P. Reva, V. V. Zabudsky, S. V. Sapon, A. G. Golenkov, A. M. Torchinsky, S. V. Korinets, F. F. Sizov
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 1-2, Pp 33-37 (2017)
Electron multiplication charge coupled devices (EMCCD) technology is an innovation first introduced slightly more than a decade ago. The EMCCD is an image sensor that is capable of detecting an isolated photon without an image intensifier. It is achi
Autor:
R. Mytiai, V. Zabudsky, O. G. Golenkov, S. Korinets, S. Dukhnin, V. P. Reva, O. V. Rikhal'sky
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5-6, Pp 3-7 (2019)
This article describes the developed equipment that allows measuring the photoelectrical parameters of multielement photodetectors, specifically various formats of EMCCD (electron multiplying charge-coupled device) chips. The authors present the meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f11be1a63c9ef838e16d5f8e0ecf092
http://dspace.nbuv.gov.ua/handle/123456789/167881
http://dspace.nbuv.gov.ua/handle/123456789/167881
Autor:
Joanna V. Gumenjuk-Sichevska, K. S. Zhuravlev, I. O. Lysiuk, Fiodor F. Sizov, A. Rzhanov, A. G. Golenkov, V. Lashkaryov
Publikováno v:
Semiconductor physics, quantum electronics and optoelectronics. 18:40-45
Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise equivalent power (NEP) of these d