Zobrazeno 1 - 10
of 33
pro vyhledávání: '"A. G. Domenicucci"'
Autor:
Jinghong Li, Rainer Loesing, Z. Zhu, Philip L. Flaitz, Anthony G. Domenicucci, Shogo Mochizuki, Vamsi Paruchuri
Publikováno v:
Thin Solid Films. 557:94-100
In this study, the effect of Cluster Carbon implantation and thermal annealing for recrystallization on the properties of phosphorus doped Si (Si:P) epitaxial films was investigated. Several Cluster Carbon implantation conditions and recrystallizatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26d4b494346b1d4058e8918faed8d0d8
https://doi.org/10.1016/j.tsf.2014.01.055
https://doi.org/10.1016/j.tsf.2014.01.055
Autor:
D. K. Sadana, S. W. Bedell, K. Fogel, Nicolas Daval, Ali Khakifirooz, Anthony G. Domenicucci, Pranita Kulkarni
Publikováno v:
Microelectronic Engineering. 88:324-330
A thin body (fully depleted) strained SGOI device structure (FDSGOI), and a strained SiGe channel layer on SOI, were fabricated using scaled [email protected] gate dielectrics and metal gate technology. The uniaxial strain effect and corresponding dr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11b1584d228d5cf305424b4280e5d572
https://doi.org/10.1016/j.mee.2010.08.002
https://doi.org/10.1016/j.mee.2010.08.002
Autor:
Michael A. Gribelyuk, J. S. McMurray, Oleg Gluschenkov, Anthony G. Domenicucci, Paul Ronsheim
Publikováno v:
ECS Transactions. 11:233-242
We review formation of an electron hologram in TEM for analysis of p-n junctions in semiconductor devices. It is shown on the basis of comparison of results of electron holography and SIMS that the method can provide quantitative information directly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::79e7387c1f5ed6f57d471aa61b4e91ca
https://doi.org/10.1149/1.2778667
https://doi.org/10.1149/1.2778667
Publikováno v:
Journal of The Electrochemical Society. 145:1384-1389
The stability of CoSi 2 on polycrystalline Si has been studied as a function of both the initial Si grain size and the initial silicide thickness. When the Si grain size is small (Si grain size « polycrystalline Si thickness), CoSi 2 /polycrystallin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5447b60e7bf890967b83b2298634f27a
https://doi.org/10.1149/1.1838470
https://doi.org/10.1149/1.1838470
Publikováno v:
Journal of Applied Physics. 80:4952-4959
A systematic study was performed of the microstructural and electromigration characteristics of Ti–Al(Cu)–Ti laminate structures fabricated from two metal wiring levels 1 μm in width. The total Cu content in the Al(Cu) core layers was varied fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::503b5138eb2e0fea9235d065a9222173
https://doi.org/10.1063/1.363539
https://doi.org/10.1063/1.363539
Publikováno v:
Applied Physics Letters. 85:2493-2495
Defects in strained Si layers grown on relaxed SiGe layers were studied using chemical etching and transmission electron microscopy. Defect densities were measured in strained Si layers formed on SiGe buffer layers grown on bulk Si, as well as silico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1388f7d85c606c90bba54eca9b903ced
https://doi.org/10.1063/1.1795354
https://doi.org/10.1063/1.1795354
Publikováno v:
MRS Proceedings. 1349
Three techniques based on transmission electron microscope (TEM) have been successfully applied to measure strain/stress in the channel area of PMOS semiconductor devices with embedded SiGe in the source/drain areas: convergent beam electron diffract
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33c2e8d61ba4a58b41cf8fe7fd0cee51
https://doi.org/10.1557/opl.2011.1403
https://doi.org/10.1557/opl.2011.1403
Autor:
Russell H. Arndt, Ashima B. Chakravarti, Anthony G. Domenicucci, Amanda L. Tessier, Jinping Liu, Sunfei Fang, Kevin McStay, Zhengwen Li, Randolph F. Knarr, S. Lee, Joseph F. Shepard, Herbert L. Ho, A. Arya, R. Venigalla, W. Davies, R. Takalkar, Rishikesh Krishnan, Paul C. Parries, B. Morgenfeld, Xin Li, S. Gupta, Michael P. Chudzik, Scott R. Stiffler, Puneet Goyal, Babar A. Khan, Sadanand V. Deshpande, J. Dadson, Scott D. Allen
Publikováno v:
2010 IEEE International SOI Conference (SOI).
In this paper, we describe the unique scaling challenges, critical sources of variation, and the potential trench leakage mechanisms of 32nm trench capacitors that utilize high-к/metal electrode materials. This is the first eDRAM technology that has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::923f4cfd581d96da2ab4d0cb5f97f7c8
https://doi.org/10.1109/soi.2010.5641378
https://doi.org/10.1109/soi.2010.5641378
Autor:
R. Hasumi, Mariko Takayanagi, K. Fogel, Haizhou Yin, M. Biscardi, Masafumi Hamaguchi, Henry K. Utomo, H. Kang, James Chingwei Li, Kazuya Ohuchi, Paul Ronsheim, Kazunari Ishimaru, R. Zhang, Z. Zhu, D.-G. Park, Anthony G. Domenicucci, Katherine L. Saenger, Chun-Yung Sung, Ghavam G. Shahidi, Ryosuke Iijima, D. K. Sadana, Y. Takasu, Nivo Rovedo, J. P. de Souza, John A. Ott
Publikováno v:
2008 Symposium on VLSI Technology.
Twisted direct silicon bonded (DSB) substrate demonstrates a higher hole mobility advantage over (110) bulk substrate for PFET. The mobility shows a (110) layer thickness dependence with the thinner DSB layer having a higher hole mobility. 25% on-cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ae78d3b3cef6c89e93c87d622908020
https://doi.org/10.1109/vlsit.2008.4588609
https://doi.org/10.1109/vlsit.2008.4588609
Autor:
A. Waite, Judson R. Holt, Shahid Butt, Hasan M. Nayfeh, Anita Madan, Rohit Pal, Jinping Liu, Shwu-Jen Jeng, Jeffrey B. Johnson, Keith H. Tabakman, Thomas N. Adam, Anthony G. Domenicucci, Shreesh Narasimha
Publikováno v:
2007 65th Annual Device Research Conference.
In this paper, we quantify the relation of low lateral electric field hole mobility and channel strain to the virtual source velocity of nanoscale p-type SOI MOSFET devices with effective channel length from 35 to 50 nm and show strong correlation. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26438d700cf4dc6bcff8cb8bb1153e82
https://doi.org/10.1109/drc.2007.4373647
https://doi.org/10.1109/drc.2007.4373647