Zobrazeno 1 - 10
of 1 087
pro vyhledávání: '"A. G. Birdwell"'
Autor:
Leonard M. De La Cruz, Mahesh R. Neupane, Dmitry Ruzmetov, Tony Ivanov, James Weil, A. G. Birdwell, Pankaj B. Shah
Publikováno v:
Radar Sensor Technology XXV.
High power radio frequency (RF) transfer-doped diamond field effect transistors (FETs) are being fabricated at the Army Research Laboratory (ARL). To implement these into radar systems we have a parallel effort to extract accurate compact models from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1978fda988d9db00a683a6044c8eb8be
https://doi.org/10.1117/12.2585984
https://doi.org/10.1117/12.2585984
Publikováno v:
Radar Sensor Technology XXV.
Surface induced transfer doping (SITD) is a novel, highly efficiency doping technique that is being used to invoke the p-type surface conductivity of intrinsic diamond for high-frequency, high-power electronic devices. In the SITD process, a high ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97e5fb35250d56df707d4352bbf347c4
https://doi.org/10.1117/12.2585867
https://doi.org/10.1117/12.2585867
Autor:
A. G. Birdwell, Khamsouk Kingkeo, Mahesh R. Neupane, James Weil, Leonard M. De La Cruz, Dmitry Ruzmetov, Pankaj B. Shah, Tony Ivanov
Publikováno v:
Radar Sensor Technology XXV.
Army Research Laboratory (ARL) is developing radio frequency (RF) field-effect-transistors (FETs) on hydrogen-terminated, single-crystal diamond surfaces. By employing advanced fabrication methods, we achieve state-of-the-art device performance with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69ae371912f34eb3b82dda66c0393ff0
https://doi.org/10.1117/12.2587818
https://doi.org/10.1117/12.2587818
Autor:
Pulickel M. Ajayan, Matthew L. Chin, Sina Najmaei, Zheng Liu, Terrance O'Regan, A. G. Birdwell, Jun Lou, Madan Dubey, Matin Amani
Publikováno v:
ACS Nano. 8:7930-7937
Semiconducting MoS2 monolayers have shown many promising electrical properties, and the inevitable polycrystallinity in synthetic, large-area films renders understanding the effect of structural defects, such as grain boundaries (GBs, or line-defects
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d8aee9f667e9f9545e0066f0b9c2ad09
https://doi.org/10.1021/nn501701a
https://doi.org/10.1021/nn501701a
Autor:
Yi Song, Madan Dubey, Wenjing Fang, A. G. Birdwell, Allen Hsu, Tomas Palacios, Mildred S. Dresselhaus, Matin Amani, Jing Kong
Publikováno v:
ACS Nano. 8:6491-6499
In this work, we investigated the growth mechanisms of bilayer graphene on the outside surface of Cu enclosures at low pressures. We observed that the asymmetric growth environment of a Cu enclosure can yield a much higher (up to 100%) bilayer covera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::105eedf56d65db6799db53baa06cabf8
https://doi.org/10.1021/nn5015177
https://doi.org/10.1021/nn5015177
The effect of titanium oxide (TiO2) thickness on hysteresis behavior in non-volatile, metal-insulator-metal resistive random access memory (RRAM) was investigated using a Zr40Cu35Al15Ni10 (ZCAN) amorphous metal bottom electrode and an indium (In) top
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6af24b34aeeccb6e30d8ac4aea4d8523
https://doi.org/10.21236/ada623815
https://doi.org/10.21236/ada623815
Autor:
A. G. Birdwell, Frank Crowne
This report discusses the use of rate equations to describe kinetic processes in highly photoexcited semiconductors. In this description, the pairs of electrons and holes generated by photons from the laser illumination form a multicomponent plasma w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12402c01093d24be8808e20d1a828238
https://doi.org/10.21236/ada621328
https://doi.org/10.21236/ada621328
Autor:
S. N. Mohammad, Damian Bryson, Youn-Seon Kang, A. G. Birdwell, M. M. E. Fahmi, W. R. Thurber, Mark D. Vaudin, Alexander J. Shapiro, Lawrence H. Robins
Publikováno v:
physica status solidi (c). 2:2800-2804
The electronic structure of Si-doped InyGa1−yAs1−xNx films on GaAs substrates, grown by nitrogen-plasma-assisted MBE, was examined by photoreflectance (PR) spectroscopy at temperatures between 20 K and 300 K. The measured critical-point energies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3291a17034d47b1e1462ccc177481d9
https://doi.org/10.1002/pssc.200461492
https://doi.org/10.1002/pssc.200461492
Autor:
Chris L. Littler, A. G. Birdwell, Fred H. Pollak, P. Stauß, W. Henrion, L. Malikova, G. Behr, Robert Glosser, M. Rebien, G. H. Buh, T. J. Shaffner, Deane Chandler-Horowitz, Steve Collins
Publikováno v:
Journal of Applied Physics. 95:2441-2447
Photoreflectance spectra were obtained from an epitaxial film and a bulk single crystal of β-FeSi2 at low temperatures (T⩽180 K). A model based on the results of low-temperature absorption [M. Rebien et al., Appl. Phys. Lett. 74, 970 (1999)] was u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39f5b45fe5e82e9b2e3eff402ac121f0
https://doi.org/10.1063/1.1643778
https://doi.org/10.1063/1.1643778
Publikováno v:
Journal of Applied Physics. 91:1219-1223
The photoreflectance spectra of ion beam synthesized β-FeSi2 reveals a direct gap at 0.815 eV and are shown to agree with the band gap value obtained by photoluminescence once the adjustments for the temperature difference and trap related recombina
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffd68fb962a481c67a47c0f7f5840a39
https://doi.org/10.1063/1.1428792
https://doi.org/10.1063/1.1428792