Zobrazeno 1 - 10
of 48
pro vyhledávání: '"A. F. Zinovieva"'
Autor:
Vladimir A. Zinovyev, Zhanna V. Smagina, Aigul F. Zinovieva, Ekaterina E. Rodyakina, Aleksey V. Kacyuba, Ksenya N. Astankova, Vladimir A. Volodin, Kseniia V. Baryshnikova, Mihail I. Petrov, Mikhail S. Mikhailovskii, Valery A. Verbus, Margarita V. Stepikhova, Alexey V. Novikov
Publikováno v:
Photonics, Vol 10, Iss 11, p 1248 (2023)
In this paper, we study the effects of GeSi quantum dot emission coupling with the collective modes in the linear chains of Si disk resonators positioned on an SiO2 layer. The emission spectra as a function of the chain period and disk radius were in
Externí odkaz:
https://doaj.org/article/32f0db7640dc4daa99c890f6b04a93c0
Autor:
Vladimir A. Zinovyev, Zhanna V. Smagina, Aigul F. Zinovieva, Aleksei A. Bloshkin, Anatoly V. Dvurechenskii, Ekaterina E. Rodyakina, Margarita V. Stepikhova, Artem V. Peretokin, Alexey V. Novikov
Publikováno v:
Nanomaterials, Vol 13, Iss 17, p 2422 (2023)
The effects of resonance interaction of plasmonic and photonic modes in hybrid metal-dielectric structures with square Al nanodisk lattices coupled with a Si waveguide layer were investigated using micro-photoluminescence (micro-PL) spectroscopy. As
Externí odkaz:
https://doaj.org/article/a7afe1cee3c04c89b06f5e2691803e24
Autor:
Anatoly V. Dvurechenskii, Aleksey V. Kacyuba, Gennady N. Kamaev, Vladimir A. Volodin, Natalia P. Stepina, Aigul F. Zinovieva, Vladimir A. Zinovyev
Publikováno v:
Materials Proceedings, Vol 14, Iss 1, p 68 (2023)
The formation of CaSi2 films on Si(111) with the molecular-beam epitaxy (MBE) of CaF2 under fast electron-beam irradiation was investigated. The method of a high-planarity CaSi2 film synthesis assisted by electron-beam irradiation was developed. We c
Externí odkaz:
https://doaj.org/article/7d44e4293d104be4b25a9b780705fc20
Autor:
Aigul F. Zinovieva, Vladimir A. Zinovyev, Natalia P. Stepina, Vladimir A. Volodin, Aleksey Y. Krupin, Aleksey V. Kacyuba, Anatoly V. Dvurechenskii
Publikováno v:
Nanomaterials, Vol 12, Iss 20, p 3623 (2022)
The formation of CaSi2 polycrystalline structures under the postgrowth electron irradiation of epitaxial CaF2/Si(111) films with embedded thin Si layers was studied. The dependence on the electron exposure time was investigated for two types of struc
Externí odkaz:
https://doaj.org/article/bca1bfe67a9d477bba55cecdbb7a31e8
Autor:
V. A. Zinovyev, A. F. Zinovieva, V. A. Volodin, A. K. Gutakovskii, A. S. Deryabin, A. Yu. Krupin, L. V. Kulik, V. D. Zhivulko, A. V. Mudryi, A. V. Dvurechenskii
Publikováno v:
JETP Letters. 116:628-633
The possibility of fabricating two-dimensional Si layers on a CaF2/Si(111) film by molecular beam epitaxy is studied. The growth conditions, under which the regions of two-dimensional Si layers are formed, are found. Raman spectroscopy, transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c25e54b239790690cc5b6ac53330c590
https://doi.org/10.1134/s0021364022602159
https://doi.org/10.1134/s0021364022602159
Autor:
V. A. Zinovyev, A. V. Kacyuba, V. A. Volodin, A. F. Zinovieva, S. G. Cherkova, Zh. V. Smagina, A. V. Dvurechenskii, A. Y. Krupin, O. M. Borodavchenko, V. D. Zhivulko, A. V. Mudryi
Publikováno v:
Semiconductors. 55:808-811
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38f3d9e57b75d4d1707d12fed9b3baee
https://doi.org/10.1134/s1063782621090268
https://doi.org/10.1134/s1063782621090268
Autor:
A. V. Nenashev, Vladimir Zinovyev, A. F. Zinovieva, A. V. Dvurechenskii, Alexander A. Shklyaev, L. V. Kulik
Publikováno v:
JETP Letters. 113:52-56
Heterostructures with annular groups of GeSi quantum dots grown on Si(001) substrates with GeSi nanodisks embedded beneath the surface are investigated by the electron spin resonance technique. It is demonstrated that electrons in annular groups can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b87a4232f120c55400a1591ebfed4e7
https://doi.org/10.1134/s0021364021010112
https://doi.org/10.1134/s0021364021010112
Autor:
A. V. Katsuba, A. V. Dvurechenskii, A. V. Mudryi, A. F. Zinovieva, O. M. Borodavchenko, Zh. V. Smagina, V. D. Zhivulko, Vladimir Zinovyev
Publikováno v:
Semiconductors. 52:2149-2152
Plasmonic enhancement of the photoluminescence in hybrid structures with SiGe quantum dots and Ag nanoislands was found. Ag nanoislands grown on the top of the multilayer structures with SiGe quantum dots (QDs) support a surface plasmon resonance tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6754c310e91f3021355d44fc2df56b39
https://doi.org/10.1134/s1063782618160406
https://doi.org/10.1134/s1063782618160406
Publikováno v:
International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis.
The report is review of physical phenomena in Ge/Si quantum dot nano heterostructures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55eb1607b583672bce0d36aef26cacaf
https://doi.org/10.29003/m1548.silicon-2020/26-29
https://doi.org/10.29003/m1548.silicon-2020/26-29
Publikováno v:
International Forum “Microelectronics – 2020”. Joung Scientists Scholarship “Microelectronics – 2020”. XIII International conference «Silicon – 2020». XII young scientists scholarship for silicon nanostructures and devices physics, material science, process and analysis.
This work devotes to a comparative study of the photoluminescence of Ge/Si epitaxial structures with quantum dots created with using ion beam irradiation and structures with Ge nanoclusters formed as a result of the implantation of Ge ions into silic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::687ad1a1cb8f548b401838061017cf3e
https://doi.org/10.29003/m1598.silicon-2020/196-199
https://doi.org/10.29003/m1598.silicon-2020/196-199