Zobrazeno 1 - 9
of 9
pro vyhledávání: '"A. F. Zinov'eva"'
Autor:
A. F. Zinov’eva, V. A. Zinov’ev, S. V. Gaponenko, A. V. Dvurechenskii, N. P. Stepina, Alexander A. Shklyaev, Vladimir A. Volodin, A. S. Deryabin
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 49:434-439
The formation of Si quantum dots on Ge is studied. Fundamental differences were found between the nucleation and growth of quantum dots on substrates with different orientations, related to both the formation of a SiGe solid solution layer and the sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe7c37ba6302b77e9a5432a73f3489e5
https://doi.org/10.3103/s8756699013050038
https://doi.org/10.3103/s8756699013050038
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 49:450-460
The problem of the applicability of the six-band kp -model to heterostructures with sharp boundaries is studied by calculating the energy spectrum of holes in the Ge/Si system with quantum dots. The boundary conditions which satisfy the conditions of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da5a6b6047b86af0eeaca544f013649b
https://doi.org/10.3103/s8756699013050051
https://doi.org/10.3103/s8756699013050051
Publikováno v:
Automation and Remote Control. 72:1242-1247
For the operation of spin information swapping in the system of two vertically superposed layers of tunnel-coupled semiconductor quantum points, a problem of optimization of the time function of control voltage pulse was formulated. The corresponding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b75b29c26036dcb85c0b6732f2de756
https://doi.org/10.1134/s0005117911060117
https://doi.org/10.1134/s0005117911060117
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 5:120-125
The small angle X-ray diffraction method is applied to the system of germanium quantum dots in the silicon matrix prepared by molecular-beam epitaxy in self-organization mode using the Stranski-Krastanov technique. Depending on the growth mode, the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e3812b77a321a57ed889b2f3706f69f
https://doi.org/10.1134/s1027451011020157
https://doi.org/10.1134/s1027451011020157
Publikováno v:
Journal of Experimental and Theoretical Physics. 105:388-396
Spin relaxation is studied in the hopping conduction mode in 2D arrays of quantum dots (QDs) with structural asymmetry. It is shown that the absence of the “up-down” symmetry in a QD leads to the emergence of a new spin relaxation mechanism in tu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b8f9af58fff05df54ca9161e9f1c154
https://doi.org/10.1134/s1063776107080110
https://doi.org/10.1134/s1063776107080110
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 82:302-305
Hole spin relaxation in an isolated Ge quantum dot due to interaction with phonons is investigated. Spin relaxation in this case occurs through the mechanism of the modulation of the spin-orbit interaction by lattice vibrations. According to the calc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da89fe2862464fb94eb93dabdeb36d8b
https://doi.org/10.1134/1.2130917
https://doi.org/10.1134/1.2130917
Publikováno v:
Physics of the Solid State. 46:56-59
Electric field-induced splitting of the lines of exciton optical transitions into two peaks is observed for Ge/Si structures with quantum dots (QDs). With increasing field, one of the peaks is displaced to higher optical transition energies (blue shi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cf3016eeb5d84fb5ae30a4c3d810968
https://doi.org/10.1134/1.1641920
https://doi.org/10.1134/1.1641920
Publikováno v:
Journal of Experimental and Theoretical Physics. 96:321-330
The tight binding approximation is employed to study the Zeeman effect for the hole ground state in a quantum dot. A method is proposed for calculating the g factor for localized states in a quantum dot. This method can be used both for hole states a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a24fbc582f83a0b261175a65f22fa61
https://doi.org/10.1134/1.1560404
https://doi.org/10.1134/1.1560404
Publikováno v:
Meditsinskaia parazitologiia i parazitarnye bolezni. (1)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::2b53c8e0606497f61afc16160a47e052
https://pubmed.ncbi.nlm.nih.gov/2870418
https://pubmed.ncbi.nlm.nih.gov/2870418