Výsledky vyhledávání - "A. F. Witulski"

Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

Autor: J. M. Hutson, Ronald D. Schrimpf, Jean-Marie Lauenstein, Michael L. Alles, Andrew L. Sternberg, Kenneth F. Galloway, Robert A. Reed, Dennis R. Ball, Robert A. Johnson, A. F. Witulski

Publikováno v: IEEE Transactions on Nuclear Science. 68:1430-1435

Ion- and terrestrial neutron-induced single-event burnout (SEB) data indicate that a thicker, more lightly doped epitaxial (epi) region significantly increases the threshold at which ion-induced SEB occurs in silicon carbide (SiC) power MOSFETs and j

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ea6b4274b0b8daead91046430c1aa422
https://doi.org/10.1109/tns.2021.3079846

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A System-Level Modeling Approach for Simulating Radiation Effects in Successive-Approximation Analog-to-Digital Converters

Autor: Arthur F. Witulski, Gabor Karsai, Robert A. Reed, Tim Holman, En Xia Zhang, Kan Li, Jeffrey S. Kauppila, Philippe C. Adell, Andrew C. Daniel, M. W. Rony, Bernard G. Rax, Mahmud Reaz, Ronald D. Schrimpf

Publikováno v: IEEE Transactions on Nuclear Science. 68:1465-1472

Analog-to-digital converters (ADCs) with different topologies respond differently to total ionizing dose (TID). A flexible behavioral modeling approach is proposed for system-level simulation of TID effects in successive-approximation-register (SAR)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bf647244db1851fc45d966ee8145583b
https://doi.org/10.1109/tns.2021.3077944

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Modeling COTS System TID Response With Monte Carlo Sampling and Transistor Swapping Experiments

Autor: Nagabhushan Mahadevan, Ronald D. Schrimpf, Jeffrey S. Kauppila, M. Brandon Smith, Arthur F. Witulski, Kaitlyn L. Ryder, Andrew L. Sternberg

Publikováno v: IEEE Transactions on Nuclear Science. 68:1008-1013

Modeling systems containing commercial-off-the-shelf (COTS) parts exposed to total ionizing dose (TID) are difficult due to large parameter variability in the parts as a function of dose. This article provides a rapid approach to predicting the syste

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ae6749926e11bb520295268fc332ddbb
https://doi.org/10.1109/tns.2021.3075934

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Systems engineering and assurance modeling (SEAM): A web-based solution for integrated mission assurance

Autor: John W. Evans, Ronald D. Schrimpf, Ryan Alles, Rebekah Austin, Arthur F. Witulski, Gabor Karsai, Kaitlyn L. Ryder, Nagabhushan Mahadevan, Michael J. Campola

Publikováno v: Facta universitatis - series: Electronics and Energetics. 34:1-20

We present an overview of the Systems Engineering and Assurance Modeling (SEAM) platform, a web-browser-based tool which is designed to help engineers evaluate the radiation vulnerabilities and develop an assurance approach for electronic parts in sp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::523ee498e9218dcdb61f43650f34ebbd
https://doi.org/10.2298/fuee2101001r

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New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs

Autor: Daniel J. Lichtenwalner, Arthur F. Witulski, John M. Hutson, Robert A. Johnson, Jean-Marie Lauenstein, Andrew L. Sternberg, David Grider, Kenneth F. Galloway, Ronald D. Schrimpf, Robert A. Reed, Robert R. Arslanbekov, Ashok Raman, Dennis R. Ball, Michael L. Alles, Arto Javanainen

Publikováno v: Materials Science Forum. 1004:1066-1073

Ion-induced leakage current degradation, and single-event burnout may be manifestestations of the same device mechanisms in both silicon carbide power diodes and MOSFETs. In all cases there is a migration of the electrical field from the front body-d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::67092943378f179fc05be1d1e8097d95
https://doi.org/10.4028/www.scientific.net/msf.1004.1066

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Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

Autor: Ronald D. Schrimpf, J. M. Hutson, Dennis R. Ball, Robert A. Johnson, Andrew L. Sternberg, Kenneth F. Galloway, Brian D. Sierawski, Robert A. Reed, Jean-Marie Lauenstein, A. F. Witulski, Michael L. Alles, Arto Javanainen

Publikováno v: IEEE Transactions on Nuclear Science. 67:22-28

Heavy-ion data suggest that a common mechanism is responsible for single-event burnout (SEB) in 1200-V power MOSFETs and junction barrier Schottky (JBS) diodes. Similarly, heavy-ion data suggest a common mechanism is also responsible for leakage curr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ae823a207e934a17ed69cad28893ef93
https://doi.org/10.1109/tns.2019.2955922

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