Zobrazeno 1 - 10
of 43
pro vyhledávání: '"A. F. M. Anhar Uddin Bhuiyan"'
Autor:
Hemant Ghadi, Joe F. McGlone, Christine M. Jackson, Esmat Farzana, Zixuan Feng, A. F. M. Anhar Uddin Bhuiyan, Hongping Zhao, Aaron R. Arehart, Steven A. Ringel
Publikováno v:
APL Materials, Vol 8, Iss 2, Pp 021111-021111-7 (2020)
The results of a detailed investigation of electrically active defects in metal-organic chemical vapor deposition (MOCVD)-grown β-Ga2O3 (010) epitaxial layers are described. A combination of deep level optical spectroscopy (DLOS), deep level transie
Externí odkaz:
https://doaj.org/article/649bc775d0834bc8885ff75143732711
Autor:
A F M Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang, Jith Sarker, Chris Chae, Baishakhi Mazumder, Jinwoo Hwang, Hongping Zhao
Publikováno v:
APL Materials, Vol 11, Iss 4, Pp 041112-041112-12 (2023)
Phase pure β-(AlxGa1−x)2O3 thin films are grown on (001) oriented β-Ga2O3 substrates via metalorganic chemical vapor deposition. By systematically tuning the precursor molar flow rates, the epitaxial growth of coherently strained β-(AlxGa1−x)2
Externí odkaz:
https://doaj.org/article/d9ce8e2ce5964f16991a611bddb1df00
Autor:
A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang, Lingyu Meng, Jinwoo Hwang, Hongping Zhao
Publikováno v:
APL Materials, Vol 9, Iss 10, Pp 101109-101109-15 (2021)
Single α-phase (AlxGa1−x)2O3 thin films are grown on m-plane sapphire (α-Al2O3) substrates via metalorganic chemical vapor deposition. By systematically tuning the growth parameters including the precursor molar flow rates, chamber pressure, and
Externí odkaz:
https://doaj.org/article/a02a361155e04c369bc4aa3ab7887306
Autor:
Jared M. Johnson, Hsien-Lien Huang, Mengen Wang, Sai Mu, Joel B. Varley, A F M Anhar Uddin Bhuiyan, Zixuan Feng, Nidhin Kurian Kalarickal, Siddharth Rajan, Hongping Zhao, Chris G. Van de Walle, Jinwoo Hwang
Publikováno v:
APL Materials, Vol 9, Iss 5, Pp 051103-051103-8 (2021)
The development of novel ultra-wide bandgap (UWBG) materials requires precise understanding of the atomic level structural origins that give rise to their important properties. We study the aluminum atom incorporation, defect formation, and their rel
Externí odkaz:
https://doaj.org/article/d88fbad9ea1f470e8b81b63529f2fb07
Autor:
Shivam Sharma, Lingyu Meng, A. F. M. Anhar Uddin Bhuiyan, Zixuan Feng, David Eason, Hongping Zhao, Uttam Singisetti
Publikováno v:
IEEE Electron Device Letters. 43:2029-2032
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3e504609235ab21c22b739f5873a435
https://doi.org/10.1109/led.2022.3218749
https://doi.org/10.1109/led.2022.3218749
Autor:
A F M Anhar Uddin Bhuiyan, Zixuan Feng, Jared M. Johnson, Hsien-Lien Huang, Jith Sarker, Menglin Zhu, Md Rezaul Karim, Baishakhi Mazumder, Jinwoo Hwang, Hongping Zhao
Publikováno v:
APL Materials, Vol 8, Iss 3, Pp 031104-031104-8 (2020)
This paper investigated the growth of (AlxGa1−x)2O3 thin films on semi-insulating (010) Ga2O3 substrates over the entire Al composition range (0% < x ≤ 100%) via metalorganic chemical vapor deposition (MOCVD). For the Al composition x < 27%, high
Externí odkaz:
https://doaj.org/article/bcabb37e93694363a84be68ee101fe28
Autor:
Kaitian Zhang, Chenxi Hu, A. F. M. Anhar Uddin Bhuiyan, Menglin Zhu, Vijay Gopal Thirupakuzi Vangipuram, Md Rezaul Karim, Benthara Hewage Dinushi Jayatunga, Jinwoo Hwang, Kathleen Kash, Hongping Zhao
Publikováno v:
Crystal Growth & Design. 22:5004-5011
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93f6bfcd3515c104122f7a8cbf78e066
https://doi.org/10.1021/acs.cgd.2c00511
https://doi.org/10.1021/acs.cgd.2c00511
Autor:
Chinmoy Nath Saha, Abhishek Vaidya, A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Shivam Sharma, Hongping Zhao, Uttam Singisetti
Publikováno v:
Applied Physics Letters. 122
This Letter reports a high performance β-Ga2O3 thin channel MOSFET with T gate and degenerately doped (n++) source/drain contacts regrown by metal organic chemical vapor deposition. Highly scaled T-gate with a gate length of 160–200 nm was fabrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7ad1801f1370a9f4ce80c7358c4e3c1
https://doi.org/10.1063/5.0149062
https://doi.org/10.1063/5.0149062
Autor:
Hsien-Chih Huang, Zhongjie Ren, A F M Anhar Uddin Bhuiyan, Zixuan Feng, Xixi Luo, Alex Q. Huang, Hongping Zhao, Xiuling Li
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3320814e3f1e03bca0d6b6fbc6e2470f
https://doi.org/10.1109/edtm55494.2023.10103115
https://doi.org/10.1109/edtm55494.2023.10103115
Publikováno v:
Crystal Growth & Design. 22:3896-3904
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c4cf1fa1841ce59d8d3c39ddb3dcaf8
https://doi.org/10.1021/acs.cgd.2c00290
https://doi.org/10.1021/acs.cgd.2c00290