Zobrazeno 1 - 10
of 547
pro vyhledávání: '"A. F. G. Pereira"'
Publikováno v:
Nanomaterials, Vol 14, Iss 21, p 1736 (2024)
It is expected that two-dimensional (2D) metal nitrides (MNs) consisting of the 13th group elements of the periodic table and nitrogen, namely aluminium nitride (AlN), gallium nitride (GaN), indium nitride (InN) and thallium nitride (TlN), have enhan
Externí odkaz:
https://doaj.org/article/bd625786abdb4d0cb1ef65d4be19dd5f
Autor:
Nataliya A. Sakharova, André F. G. Pereira, Jorge M. Antunes, Bruno M. Chaparro, Tomás G. Parreira, José V. Fernandes
Publikováno v:
Materials, Vol 17, Iss 10, p 2444 (2024)
In recent years, tubular nanostructures have been related to immense advances in various fields of science and technology. Considerable research efforts have been centred on the theoretical prediction and manufacturing of non-carbon nanotubes (NTs),
Externí odkaz:
https://doaj.org/article/b72099971b704724865bf99186c7c218
Autor:
Tomás G. Parreira, Diogo C. Rodrigues, Marta C. Oliveira, Nataliya A. Sakharova, Pedro A. Prates, André F. G. Pereira
Publikováno v:
Metals, Vol 14, Iss 4, p 432 (2024)
This study investigates the sensitivity of the square cup forming process. It analyses how the uncertainties in the material properties, friction and process conditions affect the results of the square cup, such as equivalent plastic strain, geometry
Externí odkaz:
https://doaj.org/article/4401e801b8a8475889d6ecdc8644b116
Autor:
Nataliya A. Sakharova, Jorge M. Antunes, André F. G. Pereira, Bruno M. Chaparro, Tomás G. Parreira, José V. Fernandes
Publikováno v:
Materials, Vol 17, Iss 4, p 799 (2024)
Two-dimensional (2D) nanostructures of aluminum nitride (AlN) and gallium nitride (GaN), called nanosheets, have a graphene-like atomic arrangement and represent novel materials with important upcoming applications in the fields of flexible electroni
Externí odkaz:
https://doaj.org/article/45b080745b464edcae079ce206febe73
Autor:
Tomás G. Parreira, Armando E. Marques, Nataliya A. Sakharova, Pedro A. Prates, André F. G. Pereira
Publikováno v:
Metals, Vol 14, Iss 2, p 212 (2024)
An identification strategy based on a machine learning approach is proposed to identify the constitutive parameters of metal sheets. The main novelty lies in the use of Gaussian Process Regression with the objective of identifying the constitutive pa
Externí odkaz:
https://doaj.org/article/831a0798c9914ea78ba9e9cfe547ae03
Publikováno v:
Nanomaterials, Vol 13, Iss 20, p 2759 (2023)
Hexagonal boron nitride (h-BN) nanosheets are attractive materials for various applications that require efficient heat transfer, surface adsorption capability, biocompatibility, and flexibility, such as optoelectronics and power electronics devices,
Externí odkaz:
https://doaj.org/article/7e97668b894646a4911f39b6b23586eb
Autor:
Georgenes M. G. Silva, Victor N. S. Leão, Michel F. G. Pereira, Pedro M. Faia, Evando S. Araújo
Publikováno v:
Ceramics, Vol 4, Iss 4, Pp 576-591 (2021)
In this work, Zn2+-doped TiO2:WO3 nanostructured films, with different doping levels, were produced by electrospinning followed by sintering, and tested as potential materials for relative humidity (RH) detection. The materials microstructure was inv
Externí odkaz:
https://doaj.org/article/f751c4fe65fa4ecb8b780474174eecaa
Autor:
Evando S. Araújo, Michel F. G. Pereira, Georgenes M. G. da Silva, Ginetton F. Tavares, Carlos Y. B. Oliveira, Pedro M. Faia
Publikováno v:
Toxics, Vol 11, Iss 8, p 658 (2023)
The improper disposal of toxic and carcinogenic organic substances resulting from the manufacture of dyes, drugs and pesticides can contaminate aquatic environments and potable water resources and cause serious damage to animal and human health and t
Externí odkaz:
https://doaj.org/article/89af9da86b3442e3891653e0a14ab57e
Autor:
José V. Fernandes, André F. G. Pereira, Jorge M. Antunes, Bruno M. Chaparro, Nataliya A. Sakharova
Publikováno v:
Materials, Vol 16, Iss 15, p 5484 (2023)
One-dimensional (nanotubes) and two-dimensional (nanosheets) germanium carbide (GeC) and tin carbide (SnC) structures have been predicted and studied only theoretically. Understanding their mechanical behaviour is crucial, considering forthcoming pro
Externí odkaz:
https://doaj.org/article/f0f532deef9e449ab4b8bc87fd3bcdf0
Autor:
Nataliya A. Sakharova, André F. G. Pereira, Jorge M. Antunes, Bruno M. Chaparro, José V. Fernandes
Publikováno v:
Metals, Vol 13, Iss 1, p 73 (2022)
Among the semiconductors formed by a 13th group element and nitrogen, indium nitride (InN) has promising electronic and optical properties, which make it an appropriate material for light-emitting devices and high-speed electronic applications. One-d
Externí odkaz:
https://doaj.org/article/913a34540f6b48a18ad40ab1a1175349