Zobrazeno 1 - 5
of 5
pro vyhledávání: '"A. F. Bouhdjar"'
Publikováno v:
Transactions on Electrical and Electronic Materials. 20:494-512
This paper is concerned with the numerical modelling of a micromorph silicon tandem solar cell (a-Si:H/µc-Si:H), under series (two-terminal: 2T) and independent (four-terminal: 4T) electrical connection. The study is performed using the simulation s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeb54567dff9edf414ca51640bcbaf59
https://doi.org/10.1007/s42341-019-00136-4
https://doi.org/10.1007/s42341-019-00136-4
Autor:
M. Bdirina, Rami Boumaraf, Y. Benbouzid, Nouredine Sengouga, Y. Naoui, M. Elbar, Fahrettin Yakuphanoglu, S. Rahmane, T. E. Taouririt, A. F. Bouhdjar, Mohamed Labed, Slimane Chala
Publikováno v:
Journal of Nano- and Electronic Physics. 13:01009-1
Zinc oxide (ZnO) is one of the best transparent conducting oxide (TCO) materials with a wide bandgap and good electrical and optical properties. Its low cost, nontoxicity and transparency in the optical region of the electromagnetic spectrum make it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4ec7a280dd0fc48e75f24e71b1d6b79
https://doi.org/10.21272/jnep.13(1).01009
https://doi.org/10.21272/jnep.13(1).01009
Publikováno v:
Journal of Semiconductors. 36:074002
Using a previous model, which was developed to describe the light-induced creation of the defect density in the a-Si:H gap states, we present in this work a computer simulation of the a-Si:H p−i−n solar cell behavior under continuous illumination
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d11399d196a9ab1a209a7a8f2ae08f1
https://doi.org/10.1088/1674-4926/36/7/074002
https://doi.org/10.1088/1674-4926/36/7/074002
Publikováno v:
Journal of Semiconductors. 36:014002
Using a previous model, which was developed to describe the light-induced creation of the defect density in the a-Si:H gap states, we present in this work a numerical modelling of the photodegradation effect in the a-Si:H p-i-n solar cell under conti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3f7c31be088ffbb3cd7a358c4b2f77b
https://doi.org/10.1088/1674-4926/36/1/014002
https://doi.org/10.1088/1674-4926/36/1/014002
Publikováno v:
Journal of Semiconductors; Jul2015, Vol. 36 Issue 7, p1-1, 1p