Zobrazeno 1 - 10
of 61
pro vyhledávání: '"A. Eckau"'
Publikováno v:
In Journal of Crystal Growth 1999 206(3):187-196
Autor:
Amekura, H., Eckau, A.
Publikováno v:
Journal of Applied Physics; 10/1/1998, Vol. 84 Issue 7, p3867, 5p
Publikováno v:
Journal of Applied Physics; 3/15/1998, Vol. 83 Issue 6, p3305, 6p, 1 Black and White Photograph, 9 Graphs
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 148:481-485
We have demonstrated the 1.5 μm electroluminescence from implanted Er ions inside the SiO2 insulator of a silicon metal–oxide–semiconductor (MOS) structure under forward bias. The Er ions are excited by the direct impact from electrons tunneling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07c23f12782132e5b2c2aa571af9eeab
https://doi.org/10.1016/s0168-583x(98)00748-4
https://doi.org/10.1016/s0168-583x(98)00748-4
Publikováno v:
Solid State Phenomena. :361-368
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::449ba47b345acc48c6524ba363c609c2
https://doi.org/10.4028/www.scientific.net/ssp.63-64.361
https://doi.org/10.4028/www.scientific.net/ssp.63-64.361
Publikováno v:
Materials Science and Engineering: B. 56:234-238
The epitaxy of thin films of BaTiO3 is motivated by the potential integration of electrooptical functions onto silicon. An epitaxial buffer layer of MgO on Si will be needed for optical waveguide formation and for enabling the growth of BaTiO3. In a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b7e05f3bd0d63a73c2298f154c20e04
https://doi.org/10.1016/s0921-5107(98)00219-0
https://doi.org/10.1016/s0921-5107(98)00219-0
Publikováno v:
Journal of Applied Physics. 84:3867-3871
The room-temperature photoluminescence (PL) of Tb3+ ions has been studied. The Tb ions were implanted into 200 nm thick SiO2 on Si wafers. To achieve a uniform Tb distribution, the implantations were performed at 50, 100, and 190 keV to a total dose
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d63f95ee7c325e557a9105c2ce6f3c03
https://doi.org/10.1063/1.368591
https://doi.org/10.1063/1.368591
Publikováno v:
Applied Physics Letters. 71:2824-2826
We have demonstrated the 1.5 μm electroluminescence from implanted Er ions inside the SiO2 insulator of a silicon metal-oxide-semiconductor structure under forward bias. The Er ions are excited by the direct impact from electrons tunneling through t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eee5c9f270b704b6c9a95581b682f9a4
https://doi.org/10.1063/1.120147
https://doi.org/10.1063/1.120147
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
Visible photoluminescence (PL) from Tb/sup 3+/ ions in SiO/sub 2/ has been investigated at room temperature. The Tb ions were implanted into a 200 nm thick SiO/sub 2/ layer on a Si wafer. Since the PL of rare-earth ions is sensitive to their concentr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66e9ec0c57e268907bf2518d18041091
https://doi.org/10.1109/iit.1998.813828
https://doi.org/10.1109/iit.1998.813828
Autor:
Eckau, Arne
Publikováno v:
Jülich : Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag, Berichte des Forschungszentrums Jülich 3855, XI, 126 p. (2001).
The growth in the field of optical communication drives the high interest in integrationof photonic devices. The development of a thin film technology of photonic materials isa prerequisite for this integration. BaTiO$_{3}$ shows high transparency an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b8100b9d2c644e24bb815bc3f02cc15c
https://hdl.handle.net/2128/24126
https://hdl.handle.net/2128/24126
