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Autor:
A. V. Zdoroveishchev, I. Yu. Pashenkin, S. M. Plankina, Aleksey Nezhdanov, A. E. Paraffin, B. N. Zvonkov, S. A. Pavlov, V. P. Lesnikov, O. V. Vikhrova, Yu. A. Danilov, A. V. Kudrin
Publikováno v:
Physics of the Solid State. 59:2150-2154
Laser annealing experiments were performed in order to increase the concentration of electrically active manganese in the layers of A3B5: Mn semiconductors. An LPX-200 KrF excimer laser with a wavelength of 248 nm and a pulse duration of ~30 ns was u