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Autor:
A. E. Nastov’yak, A. P. Kovchavtsev, M. S. Aksenov, D. V. Gorshkov, G. Yu. Sidorov, Dmitriy V. Dmitriev, N. A. Valisheva
Publikováno v:
Technical Physics Letters. 46:469-472
The C–V characteristics of Au/Al2O3/In0.52Al0.48As and Au/SiO2/In0.52Al0.48As metal–insulator–semiconductor structures have been studied. It has been established that the fragmentary measurement of the C–V characteristics of InAlAs-based meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df362ea9215b1d428abb8585ee327ba1
https://doi.org/10.1134/s1063785020050259
https://doi.org/10.1134/s1063785020050259
