Zobrazeno 1 - 10
of 12
pro vyhledávání: '"A. E. M. Smink"'
Autor:
Guus Rijnders, Gertjan Koster, F. J. G. Roesthuis, Hans Hilgenkamp, J. van Dam, A. E. M. Smink, Yorick A. Birkhölzer
Publikováno v:
Physical Review Materials, 4(8):083806. American Physical Society
Reflection high-energy electron diffraction is a widely used tool to study the growth dynamics of thin films, in situ and operando. Here it is applied after deposition, revealing that the morphological state of the surface is connected to the amount
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a0ae3f9bdebf25474ba8883eb5b5a2e
https://research.utwente.nl/en/publications/cde382f9-44a9-470b-8c33-ca951f319966
https://research.utwente.nl/en/publications/cde382f9-44a9-470b-8c33-ca951f319966
Publikováno v:
Journal of Applied Physics, 127(21):214901. American Institute of Physics
Surface acoustic waves (SAWs) are capable tools for providing mechanical control over the electronic properties of functional materials. Coupling SAWs with the LaAlO3/SrTiO3 (LAO/STO) conducting interface is particularly interesting as this interface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8717b20b02a732d4f69aae806f43e20c
https://research.utwente.nl/en/publications/1d42526a-7c78-4bad-99c4-8bb230509a76
https://research.utwente.nl/en/publications/1d42526a-7c78-4bad-99c4-8bb230509a76
Autor:
Hans Hilgenkamp, A. E. M. Smink, Maurits J. de Jong, Wilfred G. van der Wiel, Jurriaan Schmitz
Publikováno v:
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)
We investigate the operation of FETs with a high-K channel material, SrTiO 3 , (K=300). The transistors show low-leakage, high-capacitance operation with a sub-nm equivalent oxide thickness, in line with expectations. In depletion however, the gate-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2e5fca05800ac10ba1bb9f228d77ba2
https://research.utwente.nl/en/publications/71a97e55-1b24-43db-87fc-0b57779e0448
https://research.utwente.nl/en/publications/71a97e55-1b24-43db-87fc-0b57779e0448
Autor:
A. E. M. Smink, Lucas M. K. Tang, Inge Leermakers, Uli Zeitler, Hans Hilgenkamp, Nikita Lebedev, Chunhai Yin, Wilfred G. van der Wiel, Jan Aarts
Publikováno v:
Physical Review Letters
In LaAlO3/SrTiO3 heterostructures, a still poorly understood phenomenon is that of electron trapping in back-gating experiments. Here, by combining magnetotransport measurements and self-consistent Schrodinger-Poisson calculations, we obtain an empir
Publikováno v:
Applied physics letters, 116(1):011601. American Institute of Physics
The two-dimensional electron system (2DES) formed at the interface of LaAlO3 (LAO) and SrTiO3 (STO), both band insulators in bulk, exhibits properties not easily attainable in conventional electronic materials. The extreme shallowness of the 2DES, on
Autor:
A. E. M. Smink, Alexander Brinkman, Michel Goiran, B. Kerdi, Uli Zeitler, Km Rubi, Walter Escoffier, Inge Leermakers, M. Yang, Hans Hilgenkamp, Abhimanyu Rana, Jan C. Maan
Publikováno v:
Journal of Physics Condensed Matter, 33(46):465002. IOP Publishing Ltd.
Journal of Physics : Condensed Matter, 33, 1-8
Journal of Physics : Condensed Matter, 33, 46, pp. 1-8
Journal of Physics : Condensed Matter, 33, 1-8
Journal of Physics : Condensed Matter, 33, 46, pp. 1-8
We have investigated the illumination effect on the magnetotransport properties of a two-dimensional electron system at the LaAlO3/SrTiO3 interface. The illumination significantly reduces the zero-field sheet resistance, eliminates the Kondo effect a
Autor:
Chunhai, Yin, Alexander E M, Smink, Inge, Leermakers, Lucas M K, Tang, Nikita, Lebedev, Uli, Zeitler, Wilfred G, van der Wiel, Hans, Hilgenkamp, Jan, Aarts
Publikováno v:
Physical review letters. 124(1)
In LaAlO_{3}/SrTiO_{3} heterostructures, a still poorly understood phenomenon is that of electron trapping in back-gating experiments. Here, by combining magnetotransport measurements and self-consistent Schrödinger-Poisson calculations, we obtain a
Autor:
A. E. M. Smink
The fundamental physical process underlying all consumer electronics on the market today is the (electric-)field effect. In the broadest sense of the word, it encompasses tuning the properties of a material by an electric field, which is usually done
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a68ed2707d90df9a62dce474b7d612b
https://doi.org/10.3990/1.9789463235136
https://doi.org/10.3990/1.9789463235136
Autor:
W.G. van der Wiel, Hans Hilgenkamp, M.P. Stehno, Alexander Brinkman, A. E. M. Smink, J. C. De Boer
Publikováno v:
Physical Review B. 97
By combined top- and backgating, we explore the correlation of superconductivity with band filling and electron confinement at the ${\mathrm{LaAlO}}_{3}\text{/}{\mathrm{SrTiO}}_{3}$ interface. We find that the top- and backgate voltages have distinct
Autor:
A. E. M. Smink, Hans Hilgenkamp
Publikováno v:
Nature materials, 18(9), 913-914. Nature Publishing Group
Using electric field gating, researchers demonstrate switching from a single- to a multi-condensate superconducting state at an oxide-based interface, and show that this transition leads to an overall weakening of the superconductivity.