Zobrazeno 1 - 10
of 23
pro vyhledávání: '"A. E. Koziukov"'
Autor:
M. Y. Vyrostkov, K. B. Bu-Khasan, A. Privat, T. A. Maksimenko, A. E. Koziukov, A. A. Kalashnikova, Kenneth F. Galloway, Hugh J. Barnaby, K. Muthuseenu
Publikováno v:
IEEE Transactions on Electron Devices. 68:4004-4009
This article presents design for a 650-V super-junction (SJ) power metal–oxide–semiconductor field effect transistor (MOSFET) which improves tolerance to both single-event burnout (SEB) and single-event gate rupture (SEGR). Experimental measureme
Autor:
A. A. Kalashnikova, A. Privat, K. B. Bu-Khasan, Aleksandr E. Koziukov, K. Muthuseenu, M. Y. Vyrostkov, Kenneth F. Galloway, Hugh J. Barnaby, T. A. Maksimenko
Publikováno v:
IEEE Transactions on Nuclear Science. 68:611-616
This article compares and analyzes the single-event gate rupture (SEGR) response of silicon planar gate super-junction (SJ) power metal oxide semiconductor field effect transistors (MOSFETs) and vertical double diffused power MOSFETs (VDMOSs). When a
Autor:
Anastasia A. Kalashnikova, Timofei A. Maksimenko, Alexandr E. Koziukov, Pavel A. Chubunov, Maksim S. Kuznetsov, Radik R. Mangushev, Artyom A. Drokin, Aleksey V. Nilov, Nikolai V. Bondarenko, Kais B. Bu-Khasan, Mikhail Yu. Vyrostkov, Mariia S. Maltseva, Nikita G. Il'Yin, Andrei S. Kukharev
Publikováno v:
2021 21th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Autor:
Grigory A. Protopopov, Andrey Repin, Evgeny Bondarev, Alexander E. Koziukov, Pavel A. Chubunov, Valentina I Denisova, Alexey V Tsurgaev
Publikováno v:
Proceedings of 37th International Cosmic Ray Conference — PoS(ICRC2021).
Publikováno v:
2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Autor:
Sergey L. Vorobiev, Oleg A. Bakhirko, Linaris R. Bakirov, Pavel A. Chubunov, Vasily S. Anashin, Alexander E. Koziukov, Sergey A. Iakovlev
Publikováno v:
2019 19th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Autor:
Artyom A. Drokin, Aleksander E. Koziukov, Aleksei S. Borisov, Sergey A. Iakovlev, Radik R. Mangushev, Alexey A. Kryukov, Nikolai V. Bondarenko, Timofei A. Maksimenko, Mikhail Yu. Vyrostkov, Vasiliy S. Anashin, Kais B. Bu-Khasan, Anastasia A. Kalashnikova
Publikováno v:
2019 IEEE Radiation Effects Data Workshop.
We present test results on the immunity of a variety of candidate spacecraft ICs and modules to proton and heavy ion induced single event effects. Tested devices include analog devices, such as comparators, amplifiers, regulators, optocouplers, DC/DC
Autor:
Linaris R. Bakirov, Larisa A. Vaishnene, A. S. Vorobyev, Evgeni M. Ivanov, Aleksandr E. Koziukov, Oleg Shcherbakov, Vasily S. Anashin, Alexei M. Gagarski
Publikováno v:
IEEE Transactions on Nuclear Science. 63:2152-2158
A description of the testing facility ISNP with spectrum resembling that of terrestrial neutron radiation developed at the PNPI (Gatchina) is given. A broad spectrum (1–1000 MeV) spallation neutron source of the facility with a neutron flux of $4 \
Autor:
Elena V. Marina, Pavel A. Monakhov, Emil F. Imametdinov, Maxim S. Gorbunov, Aleksandr E. Koziukov, Vasily S. Anashin, Andrey A. Klyayn, Andrey A. Antonov
Publikováno v:
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
We present the direct experimental vulnerability comparison of two microprocessor designs with different Single Event Effects (SEE) mitigation techniques at different heavy ion fluxes. The trade-off between the performance, fault-tolerance and power
Autor:
Grigory A. Protopopov, Pavel A. Chubunov, Aleksandr E. Koziukov, Aleksey Konyukhov, Vasily S. Anashin
Publikováno v:
2018 20th International Symposium on High-Current Electronics (ISHCE).
One of the very important challenges for space system engineers is to ensure the radiation tolerance of electronic components and spacecraft equipment to space radiation environment. For modern semiconductor devices single event effects induced by hi